相关论文: Temperature dependence of the nonlocal voltage in …

We have measured the spin injection efficiency and spin lifetime in Co$_2$FeSi/$n$-GaAs lateral nonlocal spin valves from 20 to 300 K. We observe large ($\sim$40 $\mu$V) spin valve signals at room temperature and injector currents of…

We inject spin-polarized electrons from an Fe/MgO tunnel barrier contact into n-type Ge(001) substrates with electron densities 2e16 < n < 8e17 cm-3, and electrically detect the resulting spin accumulation using three-terminal Hanle…

The temperature dependence of the electron spin $g$ factor in GaAs is investigated experimentally and theoretically. Experimentally, the $g$ factor was measured using time-resolved Faraday rotation due to Larmor precession of electron spins…

Spin injection from Co70Fe30 and Fe contacts into bulk GaAs(001) epilayers is studied experimentally. Using nonlocal measurements, the spin polarization of the differential conductance is determined as a function of the bias voltage applied…

We report nonlocal spin injection and detection experiments on mesoscopic Co-Al2O3-Cu spin valves. We have observed a temperature dependent asymmetry in the nonlocal resistance between parallel and antiparallel configurations of the…

Experiments on the time dependence of the response function of a Ag(11 at%Mn) spin glass at a temperature below the zero field spin glass temperature are used to explore the non-equilibrium nature of the spin glass phase. It is found that…

Room temperature electronic diffusion is studied in 3 mum thick epitaxial p+ GaAs lift-off films using a novel circularly polarized photoluminescence microscope. The method is equivalent to using a standard optical microscope and provides a…

We present experimental results of transverse electron-focusing measurements performed using n-type GaAs. In the presence of a small transverse magnetic field (B), electrons are focused from the injector to detector leading to focusing…

The spin lifetime and Hanle signal amplitude dependence on bias current has been investigated in insulating Al$_{0.3}$Ga$_{0.7}$As:Si using a three-terminal Hanle effect geometry. The amplitudes of the Hanle signals are much larger for…

We have investigated the effect of the gate voltage on spin relaxation in an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As heterostructure. The study is motivated by a recent proposal for a non-ballistic spin field effect transistor that utilizes the…

We have studied the spin dynamics of a high-mobility two-dimensional electron system in a GaAs/Al_{0.3}Ga_{0.7}As single quantum well by time-resolved Faraday rotation and time-resolved Kerr rotation in dependence on the initial degree of…

We study temperature evolution of spin accumulation signals obtained by the three-terminal Hanle effect measurements in a nondegenerated silicon channel with a Schottky-tunnel-barrier contact. We find the clear difference in the…

We address the temperature influence on the precessional motion of electron spins under transverse magnetic field, studied in a GaAs/AlGaAs triple quantum wells, using pump-probe Kerr rotation. In the presence of an applied in-plane…

Since the discovery of the giant magnetoresistance (GMR) effect the use of the intrinsic angular momentum of the electrons has opened up new spin based device concepts. The two channel model of spin-up and spin-down electrons with…

The evolution of the electron spin dynamics as consequence of carrier delocalization in $n$-type GaAs is investigated by the recently developed extended pump-probe Kerr/Faraday rotation spectroscopy. We find that isolated electrons…

The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercialized magnetic memories or lateral spin transistors in…

The temperature dependence of electron spin coherence in singly negatively charged (In,Ga)As/GaAs quantum dots is studied by time-resolved Faraday rotation. The decoherence time T2 is constant on a microsecond scale for temperatures below…

The influence of temperature and transport conditions on the electron spin relaxation in lightly doped n-type GaAs semiconductors is investigated. A Monte Carlo approach is used to simulate electron transport, including the evolution of…

We report on both experimental and theoretical study of conduction-electron spin polarization dynamics achieved by pulsed optical pumping at room temperature in GaAs(1-x)N(x) alloys with a small nitrogen content (x = 2.1, 2.7, 3.4%). It is…

We first report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-Ge contact at room temperature (RT), employing threeterminal Hanle measurements. A sizable spin signal of ~170 k{\Omega} {\mu}m^2 has been…