相关论文: Light effect in photoionization of traps in GaN ME…
A trapping-detrapping model is proposed for explaining the current fluctuation behavior in organic semiconductors (polyacenes) operating under current-injection conditions. The fraction of ionized traps obtained from the current-voltage…
This paper investigates the kinetics of buffer trapping in GaN-based normally-off high-voltage transistors. The analysis was carried out on transfer-length method (TLM) structures. By means of a custom setup, (i) we investigated the…
We use a string of confined $^{40}$Ca$^+$ ions to measure perturbations to a trapping potential which are caused by light-induced charging of an anti-reflection coated window and of insulating patches on the ion-trap electrodes. The…
Transient currents in atomically thin MoTe$_2$ field-effect transistor are measured during cycles of pulses through the gate electrode. The transients are analyzed in light of a newly proposed model for charge trapping dynamics that renders…
A comprehensive study of drain current dispersion effects in $\beta$-Ga$_2$O$_3$ FETs has been done using DC, pulsed and RF measurements. Both virtual gate effect in the gate-drain access region and interface traps under the gate are most…
Charge trapping in germanium detectors will inevitably impact their excellent spectral performance. Disordered regions in the germanium crystal structure, either created in the material during processing or induced by radiation exposure,…
We studied the influence of oxygen on the electronic trap states in a pentacene thin film. This was done by carrying out gated four-terminal measurements on thin-film transistors as a function of temperature and without ever exposing the…
We report spatially resolved optical probing of charge traps in organic field-effect transistors using focussed laser illumination. By scanning a 635 nm laser across the transistor channel and simultaneously acquiring transfer…
We produce large numbers of low-energy ions by photoionization of laser-cooled atoms inside a surface-electrode-based Paul trap. The isotope-selective trap loading rate of $4\times10^{5}$ Yb$^{+}$ ions/s exceeds that attained by…
Electronic trap states are a critical yet unavoidable aspect of semiconductor devices, impacting performance of various electronic devices such as transistors, memory devices, solar cells, and LEDs. The density, energy level, and position…
We recently reported on a proof-of-principle experiment demonstrating optical trapping of an ion in a single-beam dipole trap superimposed by a static electric potential [Nat. Photonics 4, 772--775 (2010)]. Here, we first discuss the…
We utilize the optical transitions of Yb$^{2+}$ excited by an ultraviolet optical parametric amplifier to probe electron trap liberation in MgF$_{2}$ via the observation of a photoluminescence enhancement effect induced by a subsequent…
Electrical charging of metal surfaces due to photoelectric generation of carriers is of concern in trapped ion quantum computation systems, due to the high sensitivity of the ions' motional quantum states to deformation of the trapping…
A giant built-in electric field in the growth direction makes excitons in wide GaN/(Al, Ga)N quantum wells spatially indirect even in the absence of any external bias. Significant densities of indirect excitons can accumulate in…
The dynamic interplay between light and electric field control of charge states lies at the heart of developing multifunctional optoelectronic devices. While persistent photoconductivity (PPC) and gate-voltage (VG)-induced electron trapping…
When laser diodes are driven by high-impedance electrical sources the variance of the number of photo-detection events counted over large time durations is less than the average number of events (sub-Poissonian light). The paper presents a…
Gallium oxide is an ultra-wide bandgap semiconductor with exceptional properties for power electronics and UV-C optoelectronics, but its behavior under illumination remains poorly understood. In this work, we investigate how optically…
Native and hydrogen-plasma induced shallow traps in hydrothermally grown ZnO crystals have been investigated by charge-based deep level transient spectroscopy (Q-DLTS), photoluminescence and cathodoluminescence microanalysis. The as-grown…
The degradation mechanisms of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration were investigated by means of hot-electron step stress and 24 hours stress tests. Firstly, DC and EL characterization…
We observe the spontaneous evaporation of atoms confined in a bubble-like rf-dressed trap (Zobay and Garraway, 2001). The atoms are confined in a quadrupole magnetic trap and are dressed by a linearly polarized rf field. The evaporation is…