相关论文: Enhancement mode double top gated MOS nanostructur…

We demonstrate the development of a double quantum dot with an integrated charge sensor fabricated in undoped GaAs/AlGaAs heterostructures using a double top-gated design. Based on the evaluation of the integrated charge sensor, the double…

We have developed a technique that dramatically reduces the contact resistances and depletes a shunting channel between the contacts outside the Hall bar in ultra-high mobility SiGe/Si/SiGe heterostructures. It involves the creation of…

This paper presents a self-consistent numerical model for calculating the charge profile and gate capacitance and therefore obtaining C-V characterization for a gate-all-around graded nanowire MOSFET with a high mobility axially graded…

Obtaining high-fidelity and robust quantum gates is the key for scalable quantum computation, and one of the promising ways is to implement quantum gates using geometric phases, where the influence of local noises can be greatly reduced. To…

A great deal of work has been done developing quantum codes with varying overhead and connectivity constraints. However, given the such an abundance of codes, there is a surprising shortage of fault-tolerant logical gates supported therein.…

We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate…

Confinement in two-dimensional transition metal dichalcogenides is an attractive platform for trapping single charge and spins for quantum information processing. Here, we present low temperature electron transport through etched 50-70nm…

We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5,400 is achieved by…

We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrostatic gate has a dominant and unique function -- control of…

The ability to gate-induce superconductivity by electrostatic charge accumulation is a recent breakthrough in physics and nano-electronics. With the exception of LaAlO$_3$/SrTiO$_3$ interfaces, experiments on gate-induced superconductors…

The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent…

The nanostructure of hydrogenated amorphous silicon (a Si:H) is studied by a combination of small-angle X-ray (SAXS) and neutron scattering (SANS) with a spatial resolution of 0.8 nm. The a-Si:H materials were deposited using a range of…

Continuously parameterized two-qubit gates are a key feature of state-of-the-art trapped-ion quantum processors as they have favorable error scalings and show distinct improvements in circuit performance over more restricted maximally…

Capacitance-Voltage (C-V) & Ballistic Current- Voltage (I-V) characteristics of Double Gate (DG) Silicon-on- Insulator (SOI) Flexible FETs having sub 35nm dimensions are obtained by self-consistent method using coupled Schrodinger- Poisson…

Silicon quantum dots are one of the most promising candidates for practical quantum computers because of their scalability and compatibility with the well-established complementary metal-oxide-semiconductor technology. However, the…

In recent years qubit designs such as transmons approached the fidelities of up to 0.999. However, even these devices are still insufficient for realizing quantum error correction requiring better than 0.9999 fidelity. Topologically…

Spins based in silicon provide one of the most promising architectures for quantum computing. Quantum dots are an inherently scalable technology. Here, we combine these two concepts into a workable design for a silicon-germanium quantum…

Mesoscopic Coulomb blockade (MCB) is recognized as a phase-coherent variant of the conventional Coulomb blockade that arises in systems with open contacts. In open quantum dots, MCB is enhanced by a decrease in background conductance. This…

For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material properties. To this aim, we report a detailed analysis of…

We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we…