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相关论文: Temperature-dependent transport in a sixfold degen…

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We report low temperature magnetotransport measurements on a high mobility (\mu=325,000 cm^2/V sec) 2D electron system on a H-terminated Si(111) surface. While low magnetic field data indicate a six-fold valley degenerate system, we observe…

介观与纳米尺度物理 · 物理学 2014-01-29 Tomasz M. Kott , Binhui Hu , S. H. Brown , B. E. Kane

Motivated by interesting recent experimental results, we consider theoretically charged-impurity scattering-limited 2D electronic transport in (100), (110), and (111)-Si inversion layers at low temperatures and carrier densities, where…

介观与纳米尺度物理 · 物理学 2013-02-11 E. H. Hwang , S. Das Sarma

We theoretically study transport properties of a two-dimensional electron system on a hydrogen-passivated Si(111) surface in the field-effect-transistor (FET) configuration. We calculate the density and temperature dependent mobility and…

材料科学 · 物理学 2009-11-11 E. H. Hwang , S. Das Sarma

We have studied an electron transport in inversion layers of high-mobility Si(100) samples. At high electron concentrations and temperatures below 4.2 K, two series of Shubnikov-de Haas oscillations have been observed. The temperature…

凝聚态物理 · 物理学 2009-10-28 S. G. Semenchinsky , L. Smrcka , J. Stehno

It has been puzzling that the resistivity of high mobility two-dimensional(2D) carrier systems in semiconductors with low carrier density often exhibits a large increase followed by a decrease when the temperature ($T$) is raised above a…

强关联电子 · 物理学 2015-05-28 Richard L. J. Qiu , Xuan P. A. Gao , Loren N. Pfeiffer , Ken W. West

We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields…

无序系统与神经网络 · 物理学 2013-03-05 N. N. Klimov , D. A. Knyazev , O. E. Omel'yanovskii , V. M. Pudalov , H. Kojima , M. E. Gershenson

Using the Drude-Boltzmann semiclassical transport theory, we calculate the weak-field Hall resistance of a two-dimensional system at low densities and temperatures, assuming carrier scattering by screened random charged impurity centers.…

无序系统与神经网络 · 物理学 2009-11-10 S. Das Sarma , E. H. Hwang

We discuss electric transport and orbital magnetism of multilayer graphenes in a weak-magnetic field using the matrix decomposition technique. At zero temperature, the minimum conductivity is given by that of the monolayer system multiplied…

介观与纳米尺度物理 · 物理学 2008-01-31 Masaaki Nakamura , Lila Hirasawa

We present an electrical transport study of the 2-dimensional (2D) organic conductor tau-(P-(S,S)-DMEDT-TTF)_2(AuBr)_2(AuBr_2)_y (y = 0.75) at low temperatures and high magnetic fields. The inter-plane resistivity rho_zz increases with…

强关联电子 · 物理学 2009-10-31 K. Storr , L. Balicas , J. S. Brooks , D. Graf , G. C. Papavassiliou

Fermi liquid theory has been a foundation in understanding the electronic properties of materials. For weakly interacting two-dimensional (2D) electron or hole systems, electron-electron interactions are known to introduce quantum…

We studied the weak field Hall voltage in 2D electron layers in Si-MOS structures with different mobilities, through the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, we have…

强关联电子 · 物理学 2009-10-31 V. M. Pudalov , G. Brunthaler , A. Prinz , G. Bauer

We report experimental results of low temperature magnetotransport in high mobility 2D electron systems exposed to radiation up to 20GHz frequency using a simple dipole configuration. Magnetoresistance oscillations are observed as in…

介观与纳米尺度物理 · 物理学 2009-11-10 R. L. Willett , L. N. Pfeiffer , K. W. West

We study how the non-Fermi-liquid two-phase state reveals itself in transport properties of high-mobility Si-MOSFETs. We have found features in zero-field transport, magnetotransport, and thermodynamic spin magnetization in a 2D correlated…

强关联电子 · 物理学 2016-06-28 L. A. Morgun , A. Yu. Kuntsevich , V. M. Pudalov

Weak field Hall resistance Rxy(T) of the 2D electron system in Si was measured over the range of temperatures 1-35 K and densities, where the diagonal resistivity exhibits a ``metallic'' behavior. The Rxy(T) dependence was found to be…

强关联电子 · 物理学 2009-11-11 A. Yu. Kuntsevich , D. A. Knyazev , V. I. Kozub , V. M. Pudalov , G. Brunhaler , G. Bauer

We report transport measurements, including: Hall, Seebeck and Nernst Effect. All these transport properties exhibit anomalous field and temperature dependences, with a change of behavior observed at about H 1.5T and T 15K. We were able to…

强关联电子 · 物理学 2012-05-24 S. Lerer , M. Ben-Shalom , G. Deutscher , Y. Dagan

The magnetic and magnetotransport properties of metallic 1$T$-VTe$_{2}$ single crystals were investigated at temperatures from 1.3 to 300 K and in magnetic fields up to 35 T. Upon applying a high magnetic field, it is found that the…

强关联电子 · 物理学 2021-03-09 Xiaxin Ding , Jie Xing , Gang Li , Luis Balicas , Krzysztof Gofryk , Hai-Hu Wen

We report magneto-transport studies of a two-dimensional electron system formed in an inversion layer at the interface between a hydrogen-passivated Si(111) surface and vacuum. Measurements in the integer quantum Hall regime demonstrate the…

介观与纳米尺度物理 · 物理学 2009-11-13 K. Eng , R. N. McFarland , B. E. Kane

We report the transport properties of mechanically exfoliated few-layer SnSe$_{2}$ flakes, whose mobility is found with four probe measurements to be ~ 85 cm$^{2}$V$^{-1}$s$^{-1}$ at 300 K, higher than those of the majority of few-layer…

介观与纳米尺度物理 · 物理学 2016-12-21 Chenglei Guo , Zhen Tian , Yanjun Xiao , Qixi Mi , Jiamin Xue

Finding and understanding non-Fermi liquid transport behaviors are at the core of condensed matter physics. Most of the existing studies were devoted to the monolayer Hubbard model, which is the simplest model that captures essential…

强关联电子 · 物理学 2024-02-27 Yin Shi , Jonathan Schirmer , Long-Qing Chen

We study the temperature and field dependence of the magnetic and transport properties of the non-Fermi-liquid compound Ce(Ru_{1-x}Rh_x)_2Si_2 at x=0.5. For fields $\lesssim $0.1T the experimental results show signatures of the presence of…

强关联电子 · 物理学 2009-10-31 Y. Tabata , D. R. Grempel , M. Ocio , T. Taniguchi , Y. Miyako
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