相关论文: Flicker Noise in Bilayer Graphene Transistors

We report pronounced magnetoconductance oscillations observed on suspended bilayer and trilayer graphene devices with mobilities up to 270,000 cm2/Vs. For bilayer devices, we observe conductance minima at all integer filling factors nu…

An approach to the problem of 1/f voltage noise observed in all conducting media is developed based on an uncertainty relation for the Fourier-transformed signal. It is shown that the quantum indeterminacy caused by non-commutativity of…

In this work, we propose the Bilayer Graphene Tunnel Field Effect Transistor (BG-TFET) as a device suitable for fabrication and circuit integration with present-day technology. It provides high Ion/Ioff ratio at ultra-low supply voltage,…

Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is shown here that the transistors exhibit two…

Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum information processors. In the latter context, on-chip FETs with low…

Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate…

We study diffusive magnetotransport in highly p-doped large area twisted bilayer graphene in 1{\deg}, 7{\deg}, 9{\deg} and 20{\deg} samples. We report weak localization in twisted bilayer graphene for the first time. All samples exhibit…

The weak temperature dependence of the resistance R(T) of monolayer graphene1-3 indicates an extraordinarily high intrinsic mobility of the charge carriers. Important complications are the presence of mobile scattering centres that strongly…

Electron transport in bilayer graphene is studied by using a first principles analysis and theMonte Carlo simulation under conditions relevant to potential applications. While the intrinsic properties are found to be much less desirable in…

Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current…

The Raman shift, broadening, and relative Raman intensities of bilayer graphene are computed as functions of the electron concentration. We include dynamic effects for the phonon frequencies and we consider the gap induced in the band…

We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain current decreases ~10% over time scales of ~10 us, consistent…

With the growing efforts in isolating solid-state qubits from external decoherence sources, the material-inherent sources of noise start to play crucial role. One representative example is electron traps in the device material or substrate.…

High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax values as high as 34 GHz at 600-nm channel length. Bias…

Short ballistic graphene Josephson junctions sustain superconducting current with a non-sinusoidal current-phase relation up to a critical current threshold. The current-phase relation, arising from proximitized superconductivity, is…

A perpendicular electric field breaks the layer symmetry of Bernal-stacked bilayer graphene, resulting in the opening of a band gap and a modification of the effective mass of the charge carriers. Using scanning tunneling microscopy and…

Bilayer graphene (BLG) at the charge neutrality point (CNP) is strongly susceptible to electronic interactions, and expected to undergo a phase transition into a state with spontaneous broken symmetries. By systematically investigating a…

We have investigated the transport and noise properties of submicron YBCO bicrystal grain-boundary junctions prepared using electron beam lithography. The junctions show an increased conductance for low voltages reminiscent of Josephson…

Telegraphic noise is one of the most significant problems that arises when making sensitive measurements with lateral electrostatic devices. In this paper we demonstrate that a wafer which had only produced devices with significant…

We present the first measurements of cyclotron resonance of electrons and holes in bilayer graphene. In magnetic fields up to B = 18 T we observe four distinct intraband transitions in both the conduction and valence bands. The transition…