相关论文: Flicker Noise in Bilayer Graphene Transistors

We measured the low frequency (10mHz < f < 10Hz) resistance fluctuations (Noise) in single crystalline ferromagnetic Ni nanowires (diameter ~35nm) in the temperature range 80K-300K. The noise spectral power shows 1/f dependence. The…

We report on the low frequency noise in the ballistic point-contacts between a silver tip and a niobium foil. The ballistic nature of the point-contacts is confirmed by Andreev reflection spectroscopy at low bias voltage with the Nb foil…

Graphene shows a strong promise for detection of terahertz (THz) radiation due to its high carrier mobility, compatibility with on-chip waveguides and transistors, and small heat capacitance. At the same time, weak reaction of graphene's…

The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene-metal interface or the contact noise, on the performance of graphene field effect transistors, can be as adverse as the contact resistance…

Bilayer graphene -- two coupled single graphene layers stacked as in graphite -- provides the only known semiconductor with a gap that can be tuned externally through electric field effect. Here we use a tight binding approach to study how…

We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO$_2$ substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when…

We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases,…

This report is aimed at reviving the explanation of flicker-noise observations as the result of spectral measurement of very low-frequency but stationary narrow-band fluctuations named as infralow-frequency noise (ILF noise) [A. Ya.…

We calculate the finite-frequency conductivity of bilayer graphene with a relative twist between the layers. The low frequency response at zero doping shows a flat conductivity with value twice that of the monolayer case and at higher…

We study the effects of low-energy electron beam irradiation up to 10 keV on graphene based field effect transistors. We fabricate metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO$_2$, obtaining specific…

The discovery of electric field induced bandgap opening in bilayer graphene opens new door for making semiconducting graphene without aggressive size scaling or using expensive substrates. However, bilayer graphene samples have been limited…

Recent experiments have reported evidence of dominant electron-hole scattering in the electric conductivity of suspended bilayer graphene near charge neutrality. According to these experiments, plots of the electric conductivity as a…

We report the first experimental study of the quantum interference correction to the conductivity of bilayer graphene. Low-field, positive magnetoconductivity due to the weak localisation effect is investigated at different carrier…

Graphene [1] and its bilayer have generated tremendous excitement in the physics community due to their unique electronic properties [2]. The intrinsic physics of these materials, however, is partially masked by disorder, which can arise…

High frequency performance limits of graphene field-effect transistors (FETs) down to a channel length of 20nm are examined by using self-consistent quantum simulations. The results indicate that although Klein band-to-band tunneling is…

We show that vapors of different chemicals produce distinguishably different effects on the low-frequency noise spectra of graphene. It was found in a systematic study that some gases change the electrical resistance of graphene devices…

We theoretically investigated phonon dispersion in AA-stacked, AB-stacked and twisted bilayer graphene with various rotation angles. The calculations were performed using the Born-von-Karman model for the intra-layer atomic interactions and…

We report a detailed study on low-frequency 1/f-noise in large-area molecular-beam epitaxy grown thin (10 nm) films of topological insulators as a function of temperature, gate voltage, and magnetic field. When the Fermi energy is within…

Graphene, due to its unique electronic structure favoring high carrier mobility, is considered a promising material for use in high-speed electronic devices in the post-silicon electronic era. For this reason, experimental research on…

We have investigated shot noise in graphene field effect devices in the temperature range of 4.2--30 K at low frequency ($f$ = 600--850 MHz). We find that for our graphene samples with large width over length ratio $W/L$, the Fano factor…