Graphene Nano-Ribbon Electronics
材料科学
2007-12-17 v1 介观与纳米尺度物理
摘要
We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases, indicating the impact of edge states. Analysis of temperature dependent measurements suggests a finite quantum confinement gap opening in narrow ribbons. The electrical current noise of the graphene ribbon devices at low frequency is found to be dominated by the 1/f noise.
引用
@article{arxiv.cond-mat/0701599,
title = {Graphene Nano-Ribbon Electronics},
author = {Zhihong Chen and Yu-Ming Lin and Michael J. Rooks and Phaedon Avouris},
journal= {arXiv preprint arXiv:cond-mat/0701599},
year = {2007}
}
备注
6 pages, 7 figures