Performance limits of graphene-ribbon-based field effect transistors
Mesoscale and Nanoscale Physics
2014-04-09 v1 Materials Science
Abstract
The performance of field effect transistors based on an single graphene ribbon with a constriction and a single back gate are studied with the help of atomistic models. It is shown how this scheme, unlike that of traditional carbon-nanotube-based transistors, reduces the importance of the specifics of the chemical bonding to the metallic electrodes in favor of the carbon-based part of device. The ultimate performance limits are here studied for various constriction and metal-ribbon contact models. In particular we show that, even for poorly contacting metals, properly taylored constrictions can give promising values for both the on-conductance and the subthreshold swing.
Cite
@article{arxiv.0707.0375,
title = {Performance limits of graphene-ribbon-based field effect transistors},
author = {F. Munoz-Rojas and J. Fernandez-Rossier and L. Brey and J. J. Palacios},
journal= {arXiv preprint arXiv:0707.0375},
year = {2014}
}
Comments
5 pages, 4 figures