超净双层石墨烯中的最小电导率与相变证据
介观与纳米尺度物理
2012-08-01 v1 强关联电子
摘要
在电荷中性点(CNP)处的双层石墨烯(BLG)对电子相互作用非常敏感，预期会发生相变进入自发破缺对称态。通过系统研究大量单栅和双栅双层石墨烯(BLG)器件，我们表明绝缘态仅出现在具有高迁移率和低外在掺杂的器件中。该绝缘态具有相关的转变温度Tc~5K和约3 meV的能隙，从而强烈暗示一个被极弱无序破坏的有能隙破缺对称态。向内在破缺对称态的转变可以通过无序、面外电场或载流子密度来调控。
引用
@article{arxiv.1202.3212,
title = {Minimum Conductivity and Evidence for Phase Transitions in Ultra-clean Bilayer Graphene},
author = {Wenzhong Bao and Jairo Velasco and Fan Zhang and Lei Jing and Brian Standley and Dmitry Smirnov and Marc Bockrath and Allan MacDonald and Chun Ning Lau},
journal= {arXiv preprint arXiv:1202.3212},
year = {2012}
}