We investigate electronic transport in gapped bilayer graphene (gBLG) devices. For certain edge terminations -typically a combination of zigzag, armchair, and bearded types - we observe edge state conduction within the band gap, which is opened by a potential bias between the two layers. The edge states can generate a non-local resistance, in line with recent experiments [1]. Band structure calculations of gBLG nanoribbons corroborate the existence of the edge states, whose edge localization can be switched by tuning the electron energy. Their existence strongly depends on the edge termination and does not originate from a topological bulk-boundary correspondence.
@article{arxiv.2511.21049,
title = {Edge-state transport in gapped bilayer graphene},
author = {Jesús Arturo Sánchez-Sánchez and Thomas Stegmann},
journal= {arXiv preprint arXiv:2511.21049},
year = {2025}
}