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相关论文: Transport gap in side-gated graphene constrictions

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Motivated by recent experiments on suspended graphene showing carrier mobilities as high as 200,000 cm^2/Vs, we theoretically calculate transport properties assuming Coulomb impurities as the dominant scattering mechanism. We argue that the…

材料科学 · 物理学 2008-05-11 S. Adam , S. Das Sarma

We review the fabrication and key transport properties of graphene double layers, consisting of two graphene monolayers placed in close proximity, independently contacted, and separated by an ultra-thin dielectric. We outline a simple band…

介观与纳米尺度物理 · 物理学 2012-06-14 Seyoung Kim , Emanuel Tutuc

We present transport measurements on a strongly coupled graphene quantum dot in a perpendicular magnetic field. The device consists of an etched single-layer graphene flake with two narrow constrictions separating a 140 nm diameter island…

介观与纳米尺度物理 · 物理学 2011-05-03 J. Guettinger , C. Stampfer , T. Frey , T. Ihn , K. Ensslin

We investigate electronic transport in gapped bilayer graphene (gBLG) devices. For certain edge terminations -typically a combination of zigzag, armchair, and bearded types - we observe edge state conduction within the band gap, which is…

介观与纳米尺度物理 · 物理学 2025-11-27 Jesús Arturo Sánchez-Sánchez , Thomas Stegmann

We propose two schemes of field-effect transistor based on gapped armchair graphene nanoribbons connected to metal leads, by introducing sidearms or on-site gate voltages. We make use of the band gap to reach excellent switch-off character.…

介观与纳米尺度物理 · 物理学 2012-05-17 H. Tong , M. W. Wu

Atomically precise graphene nanoribbons (GNRs) have emerged as promising candidates for nanoelectronic applications due to their widely tunable energy band gaps resulting from lateral quantum confinement and edge effects. Here we report on…

We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in…

介观与纳米尺度物理 · 物理学 2016-07-13 J. T. Ye , M. F. Craciun , M. Koshino , S. Russo , S. Inoue , H. T. Yuan , H. Shimotani , A. F. Morpurgo , Y. Iwasa

We employ a dual-gated geometry to control the band gap \Delta in bilayer graphene and study the temperature dependence of the resistance at the charge neutrality point, RNP(T), from 220 to 1.5 K. Above 5 K, RNP(T) is dominated by two…

介观与纳米尺度物理 · 物理学 2015-05-19 K. Zou , J. Zhu

Locally-gated single-layer graphene sheets have unusual discrete energy states inside the potential barrier induced by a finite-width gate. These states are localized outside the Dirac cone of continuum states and are responsible for novel…

介观与纳米尺度物理 · 物理学 2009-03-03 V. A. Yampol'skii , S. S. Apostolov , Z. A. Maizelis , Alex Levchenko , Franco Nori

Distribution of charge induced by a gate voltage in a graphene strip is investigated. We calculate analytically the charge profile and demonstrate a strong(macroscopic) charge accumulation along the boundaries of a micrometers-wide strip.…

介观与纳米尺度物理 · 物理学 2008-06-04 P. G. Silvestrov , K. B. Efetov

Electron transport in small graphene nanoribbons is studied by microwave emulation experiments and tight-binding calculations. In particular, it is investigated under which conditions a transport gap can be observed. Our experiments provide…

介观与纳米尺度物理 · 物理学 2017-01-18 Thomas Stegmann , John A. Franco-Villafañe , Ulrich Kuhl , Fabrice Mortessagne , Thomas H. Seligman

We investigate magneto-transport through graphene nano-ribbons as a function of gate and bias voltage, and temperature. We find that a magnetic field systematically leads to an increase of the conductance on a scale of a few tesla. This…

介观与纳米尺度物理 · 物理学 2010-10-12 Jeroen B. Oostinga , Benjamin Sacepe , Monica F. Craciun , Alberto F. Morpurgo

Grain boundaries (GBs) are ubiquitous in polycrystalline graphene materials obtained by various growth methods. It has been shown previously that considerable electrical transport gap can be opened by grain boundaries. On the other hand,…

介观与纳米尺度物理 · 物理学 2012-08-31 S. Bala Kumar , Jing Guo

We present a fabrication process for high quality suspended and double gated trilayer graphene devices. The electrical transport measurements in these transistors reveal a high charge carrier mobility (higher than 20000 cm^2/Vs) and…

介观与纳米尺度物理 · 物理学 2015-06-03 Thymofiy Khodkov , Freddie Withers , David Christopher Hudson , Monica Felicia Craciun , Saverio Russo

Metal contacts have been identified to be a key technological bottleneck for the realization of viable graphene electronics. Recently, it was observed that for structures that possess both a top and a bottom gate, the electron-hole…

介观与纳米尺度物理 · 物理学 2015-05-27 Dionisis Berdebes , Tony Low , Yang Sui , Joerg Appenzeller , Mark Lundstrom

We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither dielectric-material deposition nor electron-beam irradiation on the graphene, we obtained…

介观与纳米尺度物理 · 物理学 2015-05-30 Seung-Geol Nam , Dong-Keun Ki , Jong Wan Park , Youngwook Kim , Jun Sung Kim , Hu-Jong Lee

Strongly correlated electron liquids which occur in quantizing magnetic fields reveal a cornucopia of fascinating quantum phenomena such as fractionally charged quasiparticles, anyonic statistics, topological order, and many others. Probing…

介观与纳米尺度物理 · 物理学 2010-03-09 D. A. Abanin , I. Skachko , X. Du , E. Y. Andrei , L. S. Levitov

We study transmission in a system consisting of a curved graphene surface as an arc (ripple) of circle connected to two flat graphene sheets on the left and right sides. We introduce a mass term in the curved part and study the effect of a…

介观与纳米尺度物理 · 物理学 2022-08-12 Jaouad El-hassouny , Ahmed Jellal , El Houssine Atmania

It has been shown in a recent study [Nguyen et al., Nanotechnol. \textbf{25}, 165201 (2014)] that unstrained/strained graphene junctions are promising candidates to improve the performance of graphene transistors that is usually hindered by…

介观与纳米尺度物理 · 物理学 2014-10-07 Mai Chung Nguyen , Viet Hung Nguyen , Huy-Viet Nguyen , Philippe Dollfus

We investigate the conductivity of graphene sheet deformed over a gate. The effect of the deformation on the conductivity is twofold: The lattice distortion can be represented as pseudovector potential in the Dirac equation formalism,…

介观与纳米尺度物理 · 物理学 2013-05-29 M. V. Medvedyeva , Ya. M. Blanter