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相关论文: Transport gap in side-gated graphene constrictions

200 篇论文

The peculiar nature of electron scattering in graphene is among many exciting theoretical predictions for the physical properties of this material. To investigate electron scattering properties in a graphene plane, we have created a…

介观与纳米尺度物理 · 物理学 2007-06-19 B. Huard , J. A. Sulpizio , N. Stander , K. Todd , B. Yang , D. Goldhaber-Gordon

We report measurements of disordered graphene probed by both a high electric field and a high magnetic field. By apply a high source-drain voltage Vsd, we are able to study the current-voltage relation I-Vsd of our device. With increasing…

介观与纳米尺度物理 · 物理学 2013-10-29 Shun-Tsung Lo , Chiashain Chuang , R. K. Puddy , T. -M. Chen , C. G. Smith , C. -T. Liang

We formulate a theory of transport in graphene bilayers in the weak momentum scattering regime in such a way as to take into account contributions to the electrical conductivity to leading and next-to-leading order in the scattering…

介观与纳米尺度物理 · 物理学 2015-05-13 Dimitrie Culcer , R. Winkler

We study ballistic transport in bilayer graphene junctions and show how electrostatic gating, interlayer bias, and homogeneous strain provide complementary control over electron transmission. In the absence of strain, transport is governed…

介观与纳米尺度物理 · 物理学 2026-04-10 Dan-Na Liu , Jun Zheng , Pierre A. Pantaleon

An experimental method for detection of bound states around an antidot formed from a hole in a graphene sheet is proposed by measuring the ballistic two terminal conductances. In particularly, we consider the effect of bound states formed…

介观与纳米尺度物理 · 物理学 2014-09-26 P. Rakyta , E. Tóvári , M. Csontos , Sz. Csonka , A. Csordás , J. Cserti

We report an electron transport study of lithographically fabricated graphene nanoribbons of various widths and lengths at different temperatures. At the charge neutrality point, a length-independent transport gap forms whose size is…

介观与纳米尺度物理 · 物理学 2015-05-14 Melinda Y. Han , Juliana C. Brant , Philip Kim

By means of numerical simulation, we study in this work the effects of uniaxial strain on transport properties of strained graphene heterojunctions and explore the possibility to achieve good performance of graphene transistors using these…

介观与纳米尺度物理 · 物理学 2014-04-03 Viet Hung Nguyen , Huy Viet Nguyen , Philippe Dollfus

By studying the impact of a perpendicular magnetic field $B$ on AB-bilayer graphene (AB-BLG) under dual gating, we yield several key findings for the ballistic transport of gate $U_\infty$. Firstly, we discover that the presence of $B$…

介观与纳米尺度物理 · 物理学 2024-02-29 Mouhamadou Hassane Saley , Abderrahim El Mouhafid , Ahmed Jellal

We investigate transport in a three-terminal graphene quantum dot. All nine elements of the conductance matrix have been independently measured. In the Coulomb blockade regime accurate measurements of individual conductance resonances…

介观与纳米尺度物理 · 物理学 2012-02-24 A. Jacobsen , P. Simonet , K. Ensslin , T. Ihn

We investigate the effects of homogeneous and inhomogeneous deformations and edge disorder on the conductance of gated graphene nanoribbons. Under increasing homogeneous strain the conductance of such devices initially decreases before it…

介观与纳米尺度物理 · 物理学 2015-03-24 Diana A. Cosma , Marcin Mucha-Kruczynski , Henning Schomerus , Vladimir I. Fal'ko

We show that when the pseudomagnetic fields created by long wavelength deformations are appropriately coupled with a scalar electric potential, a significant energy gap can emerge due to the formation of a Haldane state. Ramifications of…

介观与纳米尺度物理 · 物理学 2011-05-31 T. Low , F. Guinea , M. I. Katsnelson

Linear conductance of junctions formed by graphene flakes with order of nanometer-thick electrodes attached at the corners of the flakes is studied. The explored structures have sizes up to 20000 atoms and the conductance is studied as a…

介观与纳米尺度物理 · 物理学 2015-10-08 Martin Konôpka

We study the effect of band gap on the ground-state properties of Dirac electrons in a doped graphene within the random phase approximation at zero temperature. Band gap dependence of the exchange, correlation and ground-state energies and…

介观与纳米尺度物理 · 物理学 2009-11-13 Alireza Qaiumzadeh , Reza Asgari

The important experimental advances in graphene fabrication and its peculiar transport properties motivated researchers to utilize graphene as a potential basis for the next generation of fast and smart electronic devices. In this article,…

介观与纳米尺度物理 · 物理学 2018-05-29 Hasan M. Abdullah , H. Bahlouli

We study the effect of local modulation of charge density and carrier type in graphene field effect transistors using a double top gate geometry. The two top gates lead to the formation of multiple \emph{p-n} junctions. Electron transport…

介观与纳米尺度物理 · 物理学 2012-03-09 Ajay K. Bhat , Vibhor Singh , Sunil Patil , Mandar M. Deshmukh

We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to…

介观与纳米尺度物理 · 物理学 2008-04-14 Barbaros Özyilmaz , Pablo Jarillo-Herrero , Dmitri Efetov , Dmitri A. Abanin , Leonid S. Levitov , Philip Kim

Electron transport in graphene under a laser-modulated barrier is studied in the presence of an energy gap, a scalar potential, and a uniaxial zigzag strain. The transfer-matrix approach is used with the boundary conditions to derive the…

介观与纳米尺度物理 · 物理学 2026-04-22 Hasna Chnafa , Clarence Cortes , David Laroze , Ahmed Jellal

In this paper, we study a theoretical method to calculate the conductance across a square barrier potential in monolayer graphene. We have obtained an analytical expression for the transmission coefficient across a potential barrier for…

介观与纳米尺度物理 · 物理学 2016-11-26 C. H. Fuentevilla , J. D. Lejarreta , C. Cobaleda , E. Diez

We theoretically revisit graphene transport properties as a function of carrier density, taking into account possible correlations in the spatial distribution of the Coulomb impurity disorder in the environment. We find that the charged…

介观与纳米尺度物理 · 物理学 2011-10-06 Qiuzi Li , E. H. Hwang , E. Rossi , S. Das Sarma

Using the semi-classical Boltzmann theory, we calculate the conductivity as function of the carrier density. As usually, we include the scattering from charged impurities, but conclude that the estimated impurity density is too low in order…

介观与纳米尺度物理 · 物理学 2009-11-13 T. Stauber , N. M. R. Peres , F. Guinea