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相关论文: Transport gap in side-gated graphene constrictions

200 篇论文

We investigate the effect of on-site Coulomb repulsion $U$ on the band gap of the electrically gated bilayer graphene by employing coherent potential approximation in the paramagnetic state, based on an ionic two-layer Hubbard model. We…

强关联电子 · 物理学 2016-03-17 Jin-Rong Xu , Ze-Yi Song , Hai-Qing Lin , Yu-Zhong Zhang

We investigate the effects of uniaxial strain on the transport properties of vertical devices made of two twisted graphene layers, which partially overlap each other. We find that because of the different orientations of the two graphene…

介观与纳米尺度物理 · 物理学 2015-02-26 Viet Hung Nguyen , Huy-Viet Nguyen , Jerome Saint Martin , Philippe Dollfus

We use Scanning Gate Microscopy to demonstrate the presence of localized states arising from potential inhomogeneities in a 50nm-wide, gate-defined conducting channel in encapsulated bilayer graphene. When imaging the channel conductance…

介观与纳米尺度物理 · 物理学 2021-01-04 Carolin Gold , Annika Kurzmann , Kenji Watanabe , Takashi Taniguchi , Klaus Ensslin , Thomas Ihn

As most materials available in macroscopic quantities, graphene appears in a polycrystalline form and thus contains grain boundaries. In the present work, the effect of uniaxial strain on the electronic transport properties through graphene…

介观与纳米尺度物理 · 物理学 2016-06-07 Viet Hung Nguyen , Trinh Xuan Hoang , Philippe Dollfus , Jean-Christophe Charlier

We investigate transport properties through a rectangular potential barrier in AB-stacked bilayer graphene (AB-BLG) gapped by dielectric layers. Using the Dirac-like Hamiltonian with a transfer matrix approach we obtain transmission and…

介观与纳米尺度物理 · 物理学 2021-06-30 Nadia Benlakhouy , Abderrahim El Mouhafid , Ahmed Jellal

We present transport measurements on quantum dots of sizes 45, 60 and 80 nm etched with an Ar/O2-plasma into a single graphene sheet, allowing a size comparison avoiding effects from different graphene flakes. The transport gaps and…

介观与纳米尺度物理 · 物理学 2013-08-01 D. Kölbl , D. M. Zumbühl

We study the conductivity of a graphene strip taking into account electrostatically-induced charge accumulation on its edges. Using a local dependency of the conductivity on the carrier concentration we find that the electrostatic size…

介观与纳米尺度物理 · 物理学 2010-12-09 F. T. Vasko , I. V. Zozoulenko

We present Coulomb blockade measurements in a graphene double dot system. The coupling of the dots to the leads and between the dots can be tuned by graphene in-plane gates. The coupling is a non-monotonic function of the gate voltage.…

介观与纳米尺度物理 · 物理学 2015-05-13 F. Molitor , S. Dröscher , J. Güttinger , A. Jacobsen , C. Stampfer , T. Ihn , K. Ensslin

A yet unexplored area in graphene electronics is the field of quantum ballistic transport through graphene nanostructures. Recent developments in the preparation of high mobility graphene are expected to lead to the experimental…

We present non-linear transport measurements on suspended, current annealed bilayer graphene devices. Using a multi-terminal geometry we demonstrate that devices tend to be inhomogeneous and host two different electronic phases next to each…

介观与纳米尺度物理 · 物理学 2012-11-14 Frank Freitag , Markus Weiss , Romain Maurand , Jelena Trbovic , Christian Schönenberger

Particular strain geometry in graphene could leads to a uniform pseudo-magnetic field of order 10T and might open up interesting applications in graphene nano-electronics. Through quantum transport calculations of realistic strained…

介观与纳米尺度物理 · 物理学 2015-03-13 Tony Low , F. Guinea

We theoretically investigate effect of a transverse electric field generated by side gates and a vertical electric field generated by top, back gates on energy bands and transport properties of zigzag bilayer graphene ribbons (Bernal…

介观与纳米尺度物理 · 物理学 2016-07-20 Thanh-Tra Vu , Van-Truong Tran

We report a change of three orders of magnitudes in the resistance of a suspended bilayer graphene flake which varies from a few k$\Omega$s in the high carrier density regime to several M$\Omega$s around the charge neutrality point (CNP).…

介观与纳米尺度物理 · 物理学 2012-04-24 A. Veligura , H. J. van Elferen , N. Tombros , J. C. Maan , U. Zeitler , B. J. van Wees

We study the electronic structure of gated graphene sheets. We consider both infinite graphene and finite width ribbons. The effect of Coulomb interactions between the electrically injected carriers and the coupling to the external gate are…

介观与纳米尺度物理 · 物理学 2007-08-29 J. Fernandez-Rossier , J. J. Palacios , L. Brey

We report on the transport properties of ABC and ABA stacked trilayer graphene using dual, locally gated field effect devices. The high efficiency and large breakdown voltage of the HfO2 top and bottom gates enables independent tuning of…

介观与纳米尺度物理 · 物理学 2013-02-15 K. Zou , Fan Zhang , C. Clapp , A. H. MacDonald , J. Zhu

We demonstrate ambipolar graphene field effect transistors individually controlled by local metal side gates. The side gated field effect can have on/off ratio comparable with that of the global back gate, and can be tuned in a large range…

介观与纳米尺度物理 · 物理学 2010-08-10 Jifa Tian , Luis A. Jauregui , Gabriel Lopez , Helin Cao , Yong P. Chen

We study the thermoelectrical transports for an interacting dot attached to two graphene electrodes. Graphene band structure shows a pseudogap density of states that affects strongly the transport properties. In this work, we focus on the…

介观与纳米尺度物理 · 物理学 2016-01-12 Jose Ramon Isern-Lozano , Ioan Grosu , Rosa Lopez , Jong Soo Lim , Mircea Crisan

We discuss the effect of disorder on the band gap measured in bilayer graphene in optical and transport experiments. By calculating the optical conductivity and density of states using a microscopic model in the presence of disorder, we…

介观与纳米尺度物理 · 物理学 2011-07-26 Hongki Min , D. S. L. Abergel , E. H. Hwang , S. Das Sarma

This is a theoretical study of electron transport in gated bilayer graphene - a novel semiconducting material with a tunable band gap. It is shown that the which-layer pseudospin coherence enhances the subgap conductivity and facilitates…

介观与纳米尺度物理 · 物理学 2012-05-28 Maxim Trushin

The effect of a time-modulated gate-voltage on the differential conductance $G$ of a saddle-point constriction is studied. The constriction is modeled by a symmetric saddle-point potential and the time-modulated gate-voltage is represented…

介观与纳米尺度物理 · 物理学 2009-11-11 C. S. Tang , C. S. Chu