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Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be…

We report modulation of a reversible phase transition in VO2 films by hydrogen doping. A metallic phase and a new insulating phase are successively observed at room temperature as the doping concentration increases. It is suggested that the…

A common method of adjusting the metal-insulator transition temperature of M$_{1}$ VO$_{2}$ is via disruption of the Peierls pairing by doping, or inputting stress or strain. However, since adding even small amounts of dopants will change…

强关联电子 · 物理学 2017-09-20 Jamie M. Booth , Daniel W. Drumm , Phil S. Casey , Jackson S. Smith , Salvy P. Russo

We study field-effect transistors realized from VO2 nanobeams with HfO2 as the gate dielectric. When heated up from low to high temperatures, VO2 undergoes an insulator-to-metal transition. We observe a change in conductance (~ 6 percent)…

强关联电子 · 物理学 2011-09-30 Shamashis Sengupta , Kevin Wang , Kai Liu , Ajay K. Bhat , Sajal Dhara , Junqiao Wu , Mandar M. Deshmukh

Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change.…

Charge doping is an effective way to induce metal-insulate transition (MIT) in correlated materials for many important utilizations, which is however practically limited by problem of low stability. In this study, we have achieved…

Hole doping can control the conductivity of diamond either through boron substitution, or carrier accumulation in a field-effect transistor. In this work, we combine the two methods to investigate the insulator-to-metal transition at the…

We present a density-functional theory (DFT) study of the structural, electronic, and chemical bonding behaviour in germanium (Ge)-doped vanadium dioxide (VO$_2$). Our motivation is to explain the reported increase of the metal-insulator…

材料科学 · 物理学 2023-02-03 Peter Mlkvik , Claude Ederer , Nicola A. Spaldin

Metal-insulator (MI) transitions in correlated electron systems have long been a central and controversial issue in material science. Vanadium dioxide (VO2) exhibits a first-order MI transition at 340 K. For more than half a century, it has…

强关联电子 · 物理学 2020-08-26 Yasuhiro H. Matsuda , Daisuke Nakamura , Akihiko Ikeda , Shojiro Takeyama , Yuji Muraoka , Yuki Suga

The evolution of the electronic structures of strongly correlated insulators with doping has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the…

The optical/infrared properties of films of vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) have been investigated via ellipsometry and near-normal incidence reflectance measurements from far infrared to ultraviolet frequencies.…

强关联电子 · 物理学 2009-11-13 M. M. Qazilbash , A. A. Schafgans , K. S. Burch , S. J. Yun , B. G. Chae , B. J. Kim , H. T. Kim , D. N. Basov

We apply ultrafast spectroscopy to establish a time-domain hierarchy between structural and electronic effects in a strongly-correlated electron system. We discuss the case of the model system VO2, a prototypical non-magnetic compound that…

强关联电子 · 物理学 2007-05-23 A. Cavalleri , Th. Dekorsy , H. H. Chong , J. C. Kieffer , R. W. Schoenlein

Vanadium Dioxide (VO2) is a strongly correlated material, which exhibits insulator to metal transition at ~68 C along with large resistivity and infrared optical reflectance modulation. In this work, we use atmospheric pressure thermal…

应用物理 · 物理学 2021-06-29 Ashok P , Yogesh Singh Chauhan , Amit Verma

Infrared (IR) transmittance tunable metal-insulator conversion was demonstrated on glass substrate by using thermochromic vanadium dioxide (VO2) as the active layer in three-terminal thin-film-transistor-type device with water-infiltrated…

材料科学 · 物理学 2017-09-19 Takayoshi Katase , Kenji Endo , Hiromichi Ohta

In this report, we identify the origin of the temperature dependence of the surface energy gap in impurity-doped topological insulators. The gap at the Dirac point and its variation with temperature were studied by using angle-resolved…

材料科学 · 物理学 2020-06-25 T Yilmaz , W Hines , S Alraddadi , J I Budnick , B Sinkovic

Vanadium dioxide (VO2) has drawn significant attention for its near room temperature insulator to metal transition and associated structural phase transition. The underlying Physics behind the temperature induced insulator to metal and…

材料科学 · 物理学 2023-04-19 S. R. Sahu , S. S. Majid , A. Ahad , A. Tripathy , K. Dey , S. Pal , B. K. De , Wen-Pin Hsieh , R. Rawat , V. G. Sathe , D. K. Shukla

Photoexcitation has been utilized to control quantum matter and to uncover metastable phases far from equilibrium. Among demonstrations to date, the most common is the photo-induced transition from correlated insulators to metallic states;…

Diamond, a well-known wide-bandgap insulator, becomes a low-temperature superconductor upon substitutional doping of carbon with boron. However, limited boron solubility and significant lattice disorder introduced by boron doping prevent…

介观与纳米尺度物理 · 物理学 2022-07-05 Erik Piatti , Alberto Pasquarelli , Renato S. Gonnelli

Materials with strong electronic Coulomb interactions play an increasing role in modern materials applications. "Thermochromic" systems, which exhibit thermally induced changes in their optical response, provide a particularly interesting…

强关联电子 · 物理学 2009-05-31 Jan M. Tomczak , Silke Biermann

Electrostatic doping into an $n$-type Mott insulator Sm$_{2}$CuO$_{4}$ has been successfully achieved with use of the heterojunction with an $n$-type band semiconductor Nb-doped SrTiO$_{3}$. The junction exhibits rectifying current-voltage…

强关联电子 · 物理学 2007-05-23 M. Nakamura , A. Sawa , H. Sato , H. Akoh , M. Kawasaki , Y. Tokura
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