相关论文: Anomalous Hall effect in (In,Mn)Sb dilute magnetic…
We present a theory of the anomalous Hall effect in ferromagnetic (Mn,III)V semiconductors. Our theory relates the anomalous Hall conductance of a homogeneous ferromagnet to the Berry phase acquired by a quasiparticle wavefunction upon…
The relativistic nature of the electron motion underlies the intrinsic part of the anomalous Hall effect, believed to dominate in ferromagnetic (Ga,Mn)As. In this paper, we concentrate on the crystal band structure as an important facet to…
In a magnetic metal, the Hall resistance is generally taken to be the sum of the ordinary Hall resistance and the anomalous Hall resistance. Here it is shown that this empirical relation is no longer valid when either the ordinary Hall…
The anomalous Hall effect in metal-insulator-semiconductor structures having thin (Ga,Mn)As layers as a channel has been studied in a wide range of Mn and hole densities changed by the gate electric field. Strong and unanticipated…
Thermodynamic and transport properties are reported on single crystals of the hexagonal antiferromagnet Mn$_3$Sn grown by the Sn flux technique. Magnetization measurements reveal two magnetic phase transitions at $T_1$ = 275 K and $T_2$ =…
The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here…
For over a century, the Hall effect, a transverse effect under out-of-plane magnetic field or magnetization, has been a cornerstone for magnetotransport studies and applications. Modern theoretical formulation based on the Berry curvature…
A comparative study of anomalous-Hall current injection and anisotropic current injection (through planar Hall effect) are studied in Hall devices contacted to a lateral load circuit. Hall currents are injected into the load circuit from…
Mn-based antiperovskites that exhibit topological surface states show potential applications in spintronics, magnetoelectronics, and quantum devices owing to the interplay between magnetism and topology. In this family of compounds,…
The anomalous Hall effect is investigated experimentally and theoretically for ferromagnetic thin films of Mn$_5$Ge$_3$. We have separated the intrinsic and extrinsic contributions to the experimental anomalous Hall effect, and calculated…
Recent works aiming at understanding magnetotransport phenomena in ferromagnetic III-V and II-VI semiconductors are described. Theory of the anomalous Hall effect in p-type magnetic semiconductors is discussed, and the relative role of…
We present a microscopic theory of the anomalous Hall effect in metallic multi-band ferromagnets, which accounts for all scattering-independent contributions, i.e., both the intrinsic and the so-called side jump. For a model of Gaussian…
The resistivity, temperature, and magnetic field dependence of the anomalous Hall effect in a series of metallic Ga1-xMnxAs thin films with 0.015=<x=<0.08 is presented. A quadratic dependence of the anomalous Hall resistance on the…
The anomalous Hall effect in disordered band ferromagnets is considered in the framework of quantum transport theory. A microscopic model of electrons in a random potential of identical impurities including spin-orbit coupling is used. The…
The anomalous Hall effect has considerable impact on the progress of condensed matter physics and occurs in systems with time-reversal symmetry breaking. Here we theoretically investigate the anomalous Hall effect in nonmagnetic…
In [B. Binz, A. Vishwanath and V. Aji, Phys. Rev. Lett. 96, 207202 (2006)], a magnetic structure that breaks time reversal symmetry in the absence of net magnetization was proposed as an explanation for the high pressure "partially ordered"…
The Hall effect in InMnAs layers with MnAs inclusions of 20-50 nm in size is studied both theoretically and experimentally. We find that the anomalous Hall effect can be explained by the Lorentz force caused by the magnetic field of…
It is well established that the anomalous Hall effect that a ferromagnet displays scales with its magnetization. Therefore, an antiferromagnet that has no net magnetization should exhibit no anomalous Hall effect. Here we show that the…
The anomalous Hall effect (AHE) is studied on the surface of a 3D magnetic topological insulator. By applying a modified semi-classical framework, all three contributions to the AHE, the intrinsic Berry phase curvature effect, the side-jump…
We present magnetotransport studies performed on an extended set of (Ga,Mn)As samples at 4.2 K with longitudinal conductivities sigma_{xx} ranging from the low- to the high-conductivity regime. The anomalous Hall conductivity…