相关论文: Exact Integration of the High Energy Scale in Dope…

We construct the low energy theory of a doped Mott insulator, such as the high-temperature superconductors, by explicitly integrating over the degrees of freedom far away from the chemical potential. For either hole or electron doping, a…

We show here that many of the normal state properties of the cuprates can result from the new charge 2e bosonic field which we have recently (Phys. Rev. Lett. {\bf 99}, 46404 (2007) and Phys. Rev. B 77, 014512 (2008)) shown to exist in the…

We show that doped Mott insulators exhibit a collective degree of freedom, not made out of the elemental excitations, because the number of single-particle addition states at low energy per electron per spin is greater than one. The…

Hall and optical conductivity experiments on the cuprates indicate that the low-energy fermionic degrees of freedom in a doped Mott insulator posess a component that is dynamcially generated and hence determined by the temperature. We show…

With the hierarchical Green's function approach, we study a doped Mott insulator described with the Hubbard model by analytically solving the equations of motion of an one-particle Green's function and related multiple-point correlation…

We describe a new microscopic approach for analyzing interacting electron systems with local moments or, in principle, any local order parameter. We specialize attention to the doped Mott insulator phase of the Hubbard model, where standard…

We consider the possibility that the electrons injected into organic field-effect transistors are strongly correlated. A single layer of acenes can be modelled by a Hubbard Hamiltonian similar to that used for the kappa-(BEDT-TTF)(2)X…

We show exactly that the only charged excitations that exist in the strong-coupling limit of the half-filled Hubbard model are gapped composite excitations generated by the dynamics of the charge $2e$ boson that appears upon explicit…

Understanding pairing in the strong-coupling regime of doped Mott insulators remains an open problem in the context of cuprate superconductors. We perform ultra-high resolution numerical simulations of spectral functions in the highly…

We show that doped Mott insulators, such as the copper-oxide superconductors, are asymptotically slaved in that the quasiparticle weight, $Z$, near half-filling depends critically on the existence of the high energy scale set by the upper…

The experimentally observed, ambipolar field-effect characteristics of Mott insulators are reproduced in the one-dimensional Hubbard model attached to a tight-binding model for source and drain electrodes. The formation of Schottky…

With a combination of numerical methods, including quantum Monte Carlo, exact diagonalization, and a simplified dynamical mean-field model, we consider the attosecond charge dynamics of electrons induced by strong-field laser pulses in…

We prove that the Mott insulating state is characterized by a divergence of the electron self energy at well-defined values of momenta in the first Brillouin zone. When particle-hole symmetry is present, the divergence obtains at the…

We propose a new class of ground states for doped Mott insulators in the electron second-quantization representation. They are obtained from a bosonic resonating valence bond (RVB) theory of the t-J model. At half filling, the ground state…

To clarify the mechanism of recently reported, ambipolar carrier injections into quasi-one-dimensional Mott insulators on which field-effect transistors are fabricated, we employ the one-dimensional Hubbard model attached to a tight-binding…

We present detailed analytic calculations of finite-volume energy spectra, mean field theory, as well as a systematic low-energy effective field theory for the square lattice quantum dimer model. The analytic considerations explain why a…

Suppression of rectification at metal--Mott-insulator interfaces, which is previously shown by numerical solutions to the time-dependent Schr\"odinger equation and experiments on real devices, is reinvestigated theoretically by…

We study the effect of Coulomb interaction between two oppositely doped low-dimensional tJ model systems. We exactly show that, in the one-dimensional case, an arbitrarily weak interaction leads to the formation of charge neutral…

We propose an energy-scale correspondence between the Mott physics and the Kondo lattice physics and construct a tentative phase diagram of their correlated electrons with two characteristic energy scales $\omega^*$ and $\Omega$ marking the…

In this note we study the electron spectral weight of doped Mott insulators based on the 2D slave boson gauge field theory. The vertex correction with static gauge field is calculated in the second order perturbation theory. The vertex…