半导体体与 excitonic 绝缘体界面处的可变电阻
强关联电子
2007-05-23 v1 介观与纳米尺度物理
摘要
我们求解了跨越半导体体与 excitonic 绝缘体之间制备的两带模型，用于描述该异质结处的传输特性。我们依据中性激子与带电载流子两种竞争项来分析电流。我们发现，界面电阻值很高，且对junction透明度极其敏感。我们探讨了实验验证这些结果的理想系统。
引用
@article{arxiv.cond-mat/0505247,
title = {Variable resistance at the boundary between semimetal and excitonic insulator},
author = {Massimo Rontani and L. J. Sham},
journal= {arXiv preprint arXiv:cond-mat/0505247},
year = {2007}
}
备注
Latex Elsevier Style, 14 pages, 3 postscript figures. Special Issue of Solid State Communications on Spontaneous Coherence in Excitonic Systems