价子绝缘体与半金属之间 homojunction 中的相干输运
强关联电子
2007-05-23 v1 介观与纳米尺度物理
摘要
通过求解二维能带模型，我们预测在半金属与价子绝缘体之间的界面跨越，其在低温下的热力学与电力输运将表现出高电阻行为和低熵产生，区别于半金属与常规半导体之间的界面。这种现象被归因于支配性的无耗耗价子流，其尺度远大于常规态下电子散射由有效界面势势能变化引起的尺度。这一现象基于价子浊体湮灭相中电子散射的相干性，其有效界面势能的变化长度尺度远大于常规态。
引用
@article{arxiv.cond-mat/0504121,
title = {Coherent transport in homojunction between excitonic insulator and semimetal},
author = {Massimo Rontani and L. J. Sham},
journal= {arXiv preprint arXiv:cond-mat/0504121},
year = {2007}
}
备注
RevTeX 4.0, 13 pages, 5 b/w figures, 1 colour figure, 1 table. Version modified with respect to the original, which will appear in Physical Review Letters. This version includes the supplementary (EPAPS) material as an Appendix, and it is slightly longer than the accepted version (more text and references)