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相关论文: Variable resistance at the boundary between semime…

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From the solution of a two-band model, we predict that the thermal and electrical transport across the junction of a semimetal and an excitonic insulator will exhibit high resistance behavior and low entropy production at low temperatures,…

强关联电子 · 物理学 2007-05-23 Massimo Rontani , L. J. Sham

We present a theoretical study of electronic transport in a hybrid junction consisting of an excitonic insulator sandwiched between a normal and a superconducting electrode. The normal region is described as a two-band semimetal and the…

超导电性 · 物理学 2018-12-10 D. Bercioux , B. Bujnowski , F. S. Bergeret

Energy dispersion and spin orientation of the protected states at interfaces between topological insulators (TIs) and non-topological materials depend on the charge redistribution, strain, and atomic displacement at the interface. Knowledge…

介观与纳米尺度物理 · 物理学 2020-09-29 Eklavya Thareja , Ilya Vekhter , Mahmoud M. Asmar

We study the thermal conductivity in the excitonic insulator using a simple quasi one-dimensional two-band model consisting of electron and hole bands with the Coulomb interactions between these bands. Based on the linear response theory…

强关联电子 · 物理学 2021-12-21 S. Takarada , M. Ogata , H. Matsuura

Many-body interactions can produce novel ground states in a condensed-matter system. For example, interacting electrons and holes can spontaneously form excitons, a neutral bound state, provided that the exciton binding energy exceeds the…

We analyze the transport properties of a semiconductor based bilayer system under non-equilibrium conditions with special emphasis on the charge transfer statistics in the regime dominated by the exciton transport. We consider two different…

介观与纳米尺度物理 · 物理学 2013-08-06 H. Soller , A. Komnik

This paper considers the conductance through a dirty junction between a normal conductor and a superconductor with an insulating barrier. It is shown that for large barrier resistances there is a relative enhancement of the conductance near…

凝聚态物理 · 物理学 2009-10-28 Sungkit Yip

We investigate charge transport within some background medium by means of an effective lattice model with a novel form of fermion-boson coupling. The bosons describe fluctuations of a correlated background. By analyzing groundstate and…

强关联电子 · 物理学 2009-11-13 G. Wellein , H. Fehske , A. Alvermann , D. M. Edwards

Excitonic insulators conduct neither electrons nor holes but bound electron-hole pairs, excitons. Unfortunately, it is not possible to inject and detect the electron and hole currents independently within a single semiconducting layer.…

介观与纳米尺度物理 · 物理学 2022-09-30 Maxim Trushin

We consider exciton effects on current in molecular nanojunctions, using a model comprising a two two-level sites bridge connecting free electron reservoirs. Expanding the density operator in the many-electron eigenstates of the uncoupled…

强关联电子 · 物理学 2015-05-14 GuangQi Li , Boris D. Fainberg , Abraham Nitzan , Sigmund Kohler , Peter Hänggi

Exact diagonalisations of the extended Hubbard model are performed. In the insulating regime it is shown that the nearest neighbour copper-oxygen repulsion, $V$, leads to Frenkel excitons in the charge transfer gap at values of $V$ of the…

凝聚态物理 · 物理学 2009-10-28 C. Vermeulen , W. Barford , E. R. Gagliano

In this paper, first, we present a general formulation to investigate the ground-state and elementary excitations of an excitonic insulator (EI) in real materials. In addition, we discuss the out-of-equilibrium state induced (albeit…

强关联电子 · 物理学 2023-02-03 Efstratios Manousakis

It is generally impossible to separately measure the resistance of the functional component (i.e., the intrinsic device materials) and the parasitic component (i.e., terminals, interfaces and serial loads) in a two-terminal device. Yet such…

介观与纳米尺度物理 · 物理学 2017-09-13 Yang Lu , I-Wei Chen

We calculate the critical temperature below which an excitonic insulator exists at the pressure-induced semiconductor-semimetal transition. Our approach is based on an effective-mass model for valence and conduction band electrons…

强关联电子 · 物理学 2009-11-11 Franz X. Bronold , Holger Fehske

The wide-band limit is a commonly used approximation to analyze transport through nanoscale devices. In this work we investigate its applicability to the study of charge and heat transport through molecular break junctions exposed to…

介观与纳米尺度物理 · 物理学 2018-05-15 F. Covito , F. G. Eich , R. Tuovinen , M. A. Sentef , A. Rubio

We have investigated the transport and noise properties of submicron YBCO bicrystal grain-boundary junctions prepared using electron beam lithography. The junctions show an increased conductance for low voltages reminiscent of Josephson…

超导电性 · 物理学 2009-10-31 F. Herbstritt , T. Kemen , L. Alff , A. Marx , R. Gross

I analyze electron transport through a Y-junction formed by helical edge states of a two-dimensional topological insulator (2DTI), focusing on the strongly interacting regime. An experimentally motivated device geometry and a…

介观与纳米尺度物理 · 物理学 2025-09-09 E. Novais

The contact resistance between two dissimilar semiconductors is determined by the carrier transmission through their interface. Despite the ubiquitous presence of interfaces, quantitative simulation of charge transport across such…

介观与纳米尺度物理 · 物理学 2022-05-25 Qichen Song , Jiawei Zhou , Gang Chen

We analyze the nonlinear transport properties of a bilayer exciton condensate that is contacted by four metallic leads by calculating the full counting statistics of electron transport for arbitrary system parameters. Despite its formal…

介观与纳米尺度物理 · 物理学 2012-05-01 H. Soller , F. Dolcini , A. Komnik

In this paper we consider the essential electronic excited states in parallel chains of semiconducting polymers that are currently being explored for photovoltaic and light-emitting diode applications. In particular, we focus upon various…

材料科学 · 物理学 2009-11-11 Eric R. Bittner , John Glenn Santos Ramon , Stoyan Karabunarliev
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