Soliton Tunneling Transistor
摘要
We report on a macroscopic version of the single-electron transistor (SET), which we call the soliton tunneling transistor (STT). The STT, consists of a gate capacitor coupled to a NbSe crystal with a charge density wave (CDW). The current-voltage characteristic of an STT is periodically modulated by the gate voltage, as in the SET,except that the periodicity corresponds to a macroscopic displacement charge. These results appear to be consistent with time- correlated quantum nucleation of solitons and antisolitons [see Phys. Rev. Lett. {\bf 84}, 1555 (2000)]. We discuss how the microscopic degrees of freedom within the condensate might enable quantum behavior at high temperatures, and report on preliminary modeling studies using a coupled-phase Hamiltonian to interpret our results.
引用
@article{arxiv.cond-mat/0105409,
title = {Soliton Tunneling Transistor},
author = {J. H. Miller, and G. Cardenas and A. Garcia and W. More and A. W. Beckwith and J. P. McCarten},
journal= {arXiv preprint arXiv:cond-mat/0105409},
year = {2012}
}
备注
Submitted to Phys. Rev. B, October 2001. 16 tex pages, 7 eps figures