二维 B=0 金属-绝缘体相变中的反射对称性
介观与纳米尺度物理
2009-10-28 v2
摘要
我们报道了高迁移率硅 MOSFET 中二维电子气在 B=0 金属-绝缘体相变两侧电阻率与电导率之间的显著对称性。这一对称性意味着两侧输运机制相互关联。
引用
@article{arxiv.cond-mat/9611147,
title = {Reflection symmetry at a B=0 metal-insulator transition in two dimensions},
author = {D. Simonian and S. V. Kravchenko and M. P. Sarachik},
journal= {arXiv preprint arXiv:cond-mat/9611147},
year = {2009}
}
备注
The substance of the paper is unchanged but we have given a more appropriate credit to earlier work