硅衬底上拓扑绝缘体Bi2Te3薄膜的生长动力学与厚度依赖的电子结构
介观与纳米尺度物理
2009-12-31 v1 材料科学
摘要
我们利用实时反射高能电子衍射强度振荡，建立了通过分子束外延在Si(111)衬底上生长拓扑绝缘体Bi2Te3薄膜的富Te生长动力学。原位角分辨光电子能谱(ARPES)、扫描隧道显微镜和非原位输运测量表明，未掺杂的Bi2Te3薄膜是一种本征拓扑绝缘体，其费米能级仅与金属表面态相交。实验上，我们发现单狄拉克锥表面态在厚度为两个五原子层(2 QL)时形成。理论上，我们证明了薄膜两侧表面态之间的相互作用（由拓扑表面态波函数的穿透深度决定）设定了这一厚度下限。
引用
@article{arxiv.0912.5054,
title = {Growth dynamics and thickness-dependent electronic structure of topological insulator Bi2Te3 thin films on Si},
author = {Yao-Yi Li and Guang Wang and Xie-Gang Zhu and Min-Hao Liu and Cun Ye and Xi Chen and Ya-Yu Wang and Ke He and Li-Li Wang and Xu-Cun Ma and Hai-Jun Zhang and Xi Dai and Zhong Fang and Xin-Cheng Xie and Ying Liu and Xiao-Liang Qi and Jin-Feng Jia and Shou-Cheng Zhang and Qi-Kun Xue},
journal= {arXiv preprint arXiv:0912.5054},
year = {2009}
}
备注
16 pages, 4 figures