双双层石墨烯异质结构中的栅极可调共振隧穿
介观与纳米尺度物理
2015-01-20 v1 强关联电子
摘要
我们在由六方氮化硼 (hBN) 介电层隔开的旋转对齐双双层石墨烯异质结构的层间电流-电压特性中，展示了栅极可调共振隧穿和负微分电阻。利用各层密度以及实验确定的层化学势对异质结构能带排列的分析表明，当两层双层石墨烯的能带对齐时发生共振。我们讨论了隧穿电阻对层间 hBN 厚度的依赖关系，以及共振宽度对迁移率和旋转对齐的依赖关系。
引用
@article{arxiv.1412.3027,
title = {Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures},
author = {Babak Fallahazad and Kayoung Lee and Sangwoo Kang and Jiamin Xue and Stefano Larentis and Christopher Corbet and Kyounghwan Kim and Hema C. P. Movva and Takashi Taniguchi and Kenji Watanabe and Leonard F. Register and Sanjay K. Banerjee and Emanuel Tutuc},
journal= {arXiv preprint arXiv:1412.3027},
year = {2015}
}
备注
26 pages, 6 figures; supporting information includes one figure