g-factor engineering and control in self-assembled quantum dots
介观与纳米尺度物理
2009-11-10 v1
摘要
The knowledge of electron and hole g-factors, their control and engineering are key for the usage of the spin degree of freedom for information processing in solid state systems. The electronic g-factor will be materials dependent, the effect being larger for materials with large spin-orbit coupling. Since electrons can be individually trapped into quantum dots in a controllable manner, they may represent a good platform for the implementation of quantum information processing devices. Here we use self-assembled quantum dots of InAs embedded in GaAs for the g-factor control and engineering.
引用
@article{arxiv.cond-mat/0311644,
title = {g-factor engineering and control in self-assembled quantum dots},
author = {G. Medeiros-Ribeiro and E. Ribeiro and H. Westfahl},
journal= {arXiv preprint arXiv:cond-mat/0311644},
year = {2009}
}