We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we investigate hole transport and observe current rectification due to Pauli spin blockade. Magnetic field measurements indicate that hole spin relaxation is dominated by spin-orbit interaction, and enable us to determine the effective hole g-factor ≃1.6. From an avoided singlet-triplet crossing, occurring at high magnetic field, the spin-orbit coupling strength ≃0.27meV is obtained, promising fast and all-electrical spin control.
@article{arxiv.2007.15400,
title = {Silicon quantum dot devices with a self-aligned second gate layer},
author = {Simon Geyer and Leon C. Camenzind and Lukas Czornomaz and Veeresh Deshpande and Andreas Fuhrer and Richard J. Warburton and Dominik M. Zumbühl and Andreas V. Kuhlmann},
journal= {arXiv preprint arXiv:2007.15400},
year = {2021}
}