Silicon spin qubits in gate-defined quantum dots leverage established semiconductor infrastructure and offer a scalable path toward transformative quantum technologies. Holes spins in silicon offer compact all-electrical control, whilst retaining all the salient features of a quantum dot qubit architecture. However, silicon hole spin qubits are not as advanced as electrons, due to increased susceptibility to disorder and more complex spin physics. Here we demonstrate single-qubit gate fidelities up to 99.8% and a two-qubit gate quality factor of 240, indicating a physical fidelity limit of 99.7%. These results represent the highest performance reported in natural silicon to date, made possible by fast qubit control, exchange pulsing, and industrial-grade fabrication. Notably, we achieve these results in a near-identical device as used for highly reproducible, high-fidelity electron spin qubits. With isotopic purification and device-level optimisations in the future, our hole spin qubits are poised to unlock a new operation regime for quantum CMOS architectures.
@article{arxiv.2508.00446,
title = {Precision high-speed quantum logic with holes on a natural silicon foundry platform},
author = {Isaac Vorreiter and Jonathan Y. Huang and Scott D. Liles and Joe Hillier and Ruoyu Li and Bart Raes and Stefan Kubicek and Julien Jussot and Sofie Beyne and Clement Godfrin and Sugandha Sharma and Danny Wan and Nard Dumoulin Stuyck and Will Gilbert and Chih Hwan Yang and Andrew S. Dzurak and Kristiaan De Greve and Alexander R. Hamilton},
journal= {arXiv preprint arXiv:2508.00446},
year = {2025}
}