Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot (QD) encoding a hole spin qubit, the second one a QD used for the qubit readout. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. Our result opens a viable path to qubit up-scaling through a readily exploitable CMOS platform.
@article{arxiv.1605.07599,
title = {A CMOS silicon spin qubit},
author = {R. Maurand and X. Jehl and D. Kotekar Patil and A. Corna and H. Bohuslavskyi and R. Laviéville and L. Hutin and S. Barraud and M. Vinet and M. Sanquer and S. De Franceschi},
journal= {arXiv preprint arXiv:1605.07599},
year = {2016}
}