In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based double quantum dot. We demonstrate Pauli spin blockade in the few hole regime and map the spin relaxation induced leakage current as a function of inter-dot level spacing and magnetic field. With varied inter-dot tunnel coupling we can identify different dominant spin relaxation mechanisms. Applying a strong out-of-plane magnetic field causes an avoided singlet-triplet level crossing, from which the heavy hole g-factor ∼ 0.93, and the strength of spin-orbit interaction ∼ 110 μeV, can be obtained. The demonstrated strong spin-orbit interaction of heavy hole promises fast local spin manipulation using only electrical fields, which is of great interest for quantum information processing.
@article{arxiv.1509.00553,
title = {Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot},
author = {R. Li and F. E. Hudson and A. S. Dzurak and A. R. Hamilton},
journal= {arXiv preprint arXiv:1509.00553},
year = {2023}
}