We present a magneto-photoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong resonant increase or decrease in the g-factors of different spin states that have molecular wavefunctions distributed over both quantum dots. We propose a phenomenological model for the change in g-factor based on resonant changes in the amplitude of the wavefunction in the barrier due to the formation of bonding and antibonding orbitals.
@article{arxiv.cond-mat/0608198,
title = {Electrically tunable g-factors in quantum dot molecular spin states},
author = {M. F. Doty and M. Scheibner and I. V. Ponomarev and E. A. Stinaff and A. S. Bracker and V. L. Korenev and T. L. Reinecke and D. Gammon},
journal= {arXiv preprint arXiv:cond-mat/0608198},
year = {2009}
}
Comments
5 pages, 5 figures, Accepted by Phys. Rev. Lett. New version reflects response to referee comments