English

$g$-factor anisotropy in nanowire-based InAs quantum dots

Mesoscale and Nanoscale Physics 2014-01-07 v1

Abstract

The determination and control of the electron gg-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the gg-factor on the orientation of an external magnetic field in quantum dots (QDs) formed between two metallic contacts on stacking fault free InAs nanowires. We extract the gg-factor from the splitting of Kondo resonances and find that it varies continuously in the range between g=5|g^*| = 5 and 15.

Keywords

Cite

@article{arxiv.1309.0726,
  title  = {$g$-factor anisotropy in nanowire-based InAs quantum dots},
  author = {Samuel d'Hollosy and Gábor Fábián and Andreas Baumgartner and Jesper Nygård and Christian Schönenberger},
  journal= {arXiv preprint arXiv:1309.0726},
  year   = {2014}
}

Comments

2 pages, 2 figures

R2 v1 2026-06-22T01:19:50.603Z