We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron spin resonance and compare it to the enhanced electron g factor determined from analysis of the magneto-transport. Next, we form laterally defined quantum dots using these quantum wells and extract the electron g factor from analysis of the cotunneling and Kondo effect within the quantum dots. We conclude that the Lande electron g factor of the quantum dot is primarily governed by the electron g factor of the quantum well suggesting that well width is an ideal design parameter for g-factor engineering QDs.
@article{arxiv.1412.6260,
title = {Tuning the electrically evaluated electron Lande g factor in GaAs quantum dots and quantum wells of different well widths},
author = {G. Allison and T. Fujita and K. Morimoto and S. Teraoka and M. Larsson and H. Kiyama and A. Oiwa and S. Haffouz and D. G. Austing and A. Ludwig and A. D. Wieck and S. Tarucha},
journal= {arXiv preprint arXiv:1412.6260},
year = {2014}
}