Electron localization in the Si/Ge heterosystem with Si quantum dots (QDs) was studied by transport and electron spin resonance (ESR) measurements. For Si QD structures grown on Ge(111) substrates, the ESR signal with g-factor g=2.0022±0.0001 and ESR line width ΔH≈1.2 Oe was observed and attributed to the electrons localized in QDs. The g-factor value was explained by taking into account the energy band modification due to strain effects and quantum confinement. A strong Ge-Si intermixing in QD structures grown on Ge(001) is assumed to be main reason of unobserved ESR signal from QDs. The transport behavior confirms the efficient electron localization in Si QDs.
@article{arxiv.1509.06901,
title = {Electron localization in self-assembled Si/Ge(111) quantum dots},
author = {Natalia Stepina and Aigul Zinovieva and Vladimir Zinovyev and Alexander Deryabin and Anatoly Dvurechenskii and Leonid Kulik},
journal= {arXiv preprint arXiv:1509.06901},
year = {2015}
}