We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2 interface. The signal and its intensity show a pronounced dependence on applied gate voltage. At gate voltages below the threshold of the MOSFET, the signal is from weakly confined, isolated electrons as evidenced by the Curie-like temperature dependence of its intensity. The situation above threshold appears more complicated. These large-area MOSFETs provide the capability to controllably tune from insulating to conducting regimes by adjusting the gate voltage while monitoring the state of the 2D electron spins spectroscopically.
@article{arxiv.0710.1216,
title = {Spin resonance of 2D electrons in a large-area silicon MOSFET},
author = {S. Shankar and A. M. Tyryshkin and S. Avasthi and S. A. Lyon},
journal= {arXiv preprint arXiv:0710.1216},
year = {2009}
}
Comments
7 pages, 3 figures, submitted to Physica E special edition for EPS2DS-17