MoS2 has recently emerged as a promising material for enabling quantum devices and spintronic applications. In this context, an improved physical understanding of the g-factor of MoS2 depending on device geometry is of great importance. Resistively detected electron spin resonance (RD-ESR) could be employed to and the determine the g-factor in micron-scale devices However, its application and RD-ESR studies have been limited by Schottky or high-resistance contacts to MoS2. Here, we exploit naturally n-doped few-layer MoS2 devices with ohmic tin (Sn) contacts that allow the electrical study of spin phenomena. Resonant excitation of electron spins and resistive detection is a possible path to exploit the spin effects in MoS2 devices. Using RD-ESR, we determine the g-factor of few-layer MoS2 to be ~1.92 and observe that the g-factor value is independent of the charge carrier density within the limits of our measurements.
@article{arxiv.2410.18758,
title = {Resistively detected electron spin resonance and g-factor in few-layer exfoliated MoS2 devices},
author = {Chithra H. Sharma and Appanna Parvangada and Lars Tiemann and Kai Rossnagel and Jens Martin and Robert H. Blick},
journal= {arXiv preprint arXiv:2410.18758},
year = {2025}
}