Related papers: Resistively detected electron spin resonance and g…

The precise value of the $g$-factor in graphene is of fundamental interest for all spin-related properties and their application. We investigate monolayer graphene on a Si/SiO2 substrate by resistively detected electron spin resonance…

We report electron spin resonance (ESR) measurements on a large-area silicon MOSFET. An ESR signal at g-factor 1.9999(1), and with a linewidth of 0.6 G, is observed and found to arise from two-dimensional (2D) electrons at the Si/SiO2…

A series of electron spin resonance (ESR) experiments were performed on a single crystal of the heavy fermion metal YbIr2Si2 to map out the anisotropy of the ESR-intensity I_ESR which is governed by the microwave field component of the…

Coupling graphene's excellent electron and spin transport properties with higher spin-orbit coupling material allows tackling the hurdle of spin manipulation in graphene, due to the proximity to van-der-Waals layers. Here we use magneto…

Transition metal dichalcogenide MoS2 is a two-dimensional material, attracting much attention for next-generation applications thanks to rich functionalities stemmed from the crystal structure. Many experimental and theoretical works have…

Multi-frequency electron spin resonance (ESR) transmission spectra have been measured as function of temperature and magnetic field on single crystals of the quasi-one-dimensional spin-1 chain compound SrNi2V2O8 in the GHz frequency range.…

We present a new experimental approach to investigate the magnetic properties of the anisotropic heavy-fermion system YbRh$_2$Si$_2$ as a function of crystallographic orientation. Angle-dependent electron spin resonance (ESR) measurements…

Employing the original, all-optical method, we quantify the magnetic susceptibility of a two-dimensional electron gas (2DEG) confined in the MoSe$_2$ monolayer in the range of low and moderate carrier densities. The impact of…

This work presents a detailed experimental investigation of the interaction between molecular hydrogen (H$_2$) and monolayer MoS$_2$ field effect transistors (MoS$_2$ FET), aiming for sensing application. The MoS$_2$ FET exhibits a response…

Direct electron spin resonance (ESR) on a high mobility two dimensional electron gas in a single AlAs quantum well reveals an electronic $g$-factor of 1.991 at 9.35 GHz and 1.989 at 34 GHz with a minimum linewidth of 7 Gauss. The ESR…

In a recent Letter (PRL 88, 196404 (2002)), the effective g-factor and the effective mass have been studied by Pudalov et al. in a dilute 2D electron system in silicon. The authors contrast their data with the data obtained by our group…

Atomically thin two dimensional (2D) layered materials have emerged as a new class of material for nanoelectromechanical systems (NEMS) due to their extraordinary mechanical properties and ultralow mass density. Among them, graphene has…

We study the interplay of electron and photon spin in non-reciprocal materials. Traditionally, the primary mechanism to design non-reciprocal photonic devices has been magnetic fields in conjunction with magnetic oxides, such as iron…

The electron spin resonance (ESR) of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be turned by means of a gate voltage. The front and back gates of the…

We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance…

We have measured the effective mass, m, and Lande g-factor in very dilute two-dimensional electron systems in silicon. Two independent methods have been used: (i) measurements of the magnetic field required to fully polarize the electrons'…

We have obtained analytical expressions for the q-dependent static spin susceptibility of monolayer transition metal dichalcogenides, considering both the electron-doped and hole-doped cases. Our results are applied to calculate…

We report a systematic study of coherent spin precession and spin dephasing in electron-doped monolayer MoS$_2$. Using time-resolved Kerr rotation spectroscopy and applied in-plane magnetic fields, a nanosecond-timescale Larmor spin…

Atomically thin MoSe2 is a promising platform for investigating quantum phenomena due to its large effective mass, high crystal quality, and strong spin-orbit coupling. In this work, we demonstrate a triple-gate device design with bismuth…

Low-resistivity metal-semiconductor (M-S) contact is one of the urgent challenges in the research of 2D transition metal dichalcogenides (TMDs). Here, we report a chloride molecular doping technique which greatly reduces the contact…