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Probing Electron Spin Resonance in Monolayer Graphene

Materials Science 2017-08-16 v1 Mesoscale and Nanoscale Physics
Authors: Timothy J. Lyon , Jonas Sichau , August Dorn , Alba Centeno , Amaia Pesquera , Amaia Zurutuza , Robert H. Blick
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Abstract

The precise value of the gg-factor in graphene is of fundamental interest for all spin-related properties and their application. We investigate monolayer graphene on a Si/SiO2 substrate by resistively detected electron spin resonance (ESR). Surprisingly, the magnetic moment and corresponding g-factor of 1.952+/-0.002 is insensitive to charge carrier type, concentration, and mobility.

Keywords

monolayer graphene electron spin resonance g-factor resistively detected ESR magnetic moment charge carrier mobility

Cite

@article{arxiv.1611.08782,
  title  = {Probing Electron Spin Resonance in Monolayer Graphene},
  author = {Timothy J. Lyon and Jonas Sichau and August Dorn and Alba Centeno and Amaia Pesquera and Amaia Zurutuza and Robert H. Blick},
  journal= {arXiv preprint arXiv:1611.08782},
  year   = {2017}
}

Comments

5 pages, 3 figures

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