The mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in silicon/silicon-germanium (Si/SiGe 2DEGs). The spin decoherence time T2∗ is presented in conjunction with the 2DEG density ne and momentum scattering time τp as measured from transport experiments. A pronounced dependence of T2∗ on the orientation of the applied magnetic field with respect to 2DEG layer is found which is not consistent with that expected from any mechanism described in the literature.
@article{arxiv.cond-mat/0411735,
title = {Electron spin coherence in Si/SiGe quantum wells},
author = {J. L. Truitt and K. A. Slinker and K. L. M. Lewis and D. E. Savage and Charles Tahan and L. J. Klein and Robert Joynt and M. G. Lagally and D. W. van der Weide and S. N. Coppersmith and M. A. Eriksson and A. M. Tyryshkin and J. O. Chu and P. M. Mooney},
journal= {arXiv preprint arXiv:cond-mat/0411735},
year = {2007}
}