A theory for longitudinal (T1) and transverse (T2) electron spin coherence times in zincblende semiconductor quantum wells is developed based on a non-perturbative nanostructure model solved in a fourteen-band restricted basis set. Distinctly different dependences of coherence times on mobility, quantization energy, and temperature are found from previous calculations. Quantitative agreement between our calculations and measurements is found for GaAs/AlGaAs, InGaAs/InP, and GaSb/AlSb quantum wells.
@article{arxiv.cond-mat/0004461,
title = {Electron Spin Decoherence in Bulk and Quantum Well Zincblende Semiconductors},
author = {Wayne H. Lau and J. T. Olesberg and Michael E. Flatte'},
journal= {arXiv preprint arXiv:cond-mat/0004461},
year = {2009}
}