English

Detection of 2D electron g-factor sign inversion in narrow GaAs/AlGaAs quantum wells

Mesoscale and Nanoscale Physics 2015-03-27 v1

Abstract

By means of CW polarization-resolved photoluminescence spectroscopy we demonstrate the sign inversion of gzg_z-component of 2D electron g-factor with narrowing of a hosting GaAs/Al0.33_{0.33}Ga0.67_{0.67}As quantum well (QW). The energy splitting between spectral lines correspoding to recombination from the electron lowest Landau level and possessing opposite curcular polarization is analyzed. Due to exchange interaction, this value reveals maximum or minimum as a function of magnetic field strength in the vicinity of electron filling factor ν=3\nu=3. The actual type of extremum depends on the electron gzg_z-component sign. The method allows to detect the sign inversion of electron Lande g-factor with its absolute value changing by less than Δg0.06\Delta g \approx 0.06. The reversal happens at a QW width of (65±365\pm 3 \AA).

Keywords

Cite

@article{arxiv.1410.8758,
  title  = {Detection of 2D electron g-factor sign inversion in narrow GaAs/AlGaAs quantum wells},
  author = {V. V. Solovyev and W. Dietsche and I. V. Kukushkin},
  journal= {arXiv preprint arXiv:1410.8758},
  year   = {2015}
}

Comments

9 pages, 4 figures. Submitted to JETP letters. Main text in Russian