半导体量子阱中的激子自旋动力学
其他凝聚态物理
2009-11-13 v1
摘要
本文将综述半导体量子阱中的激子自旋动力学。纳米结构中激子的自旋特性由其精细结构决定。本综述将主要聚焦于作为模型系统的 GaAs 和 InGaAs 量子阱。
引用
@article{arxiv.0711.2030,
title = {Exciton Spin Dynamics in Semiconductor Quantum Wells},
author = {Thierry Amand and Xavier Marie},
journal= {arXiv preprint arXiv:0711.2030},
year = {2009}
}
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55 pages, 27 figures
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