双通道纳米管环栅场效应晶体管中的驱动电流提升
应用物理
2023-07-06 v1
摘要
我们展示了一种奇异的双通道NT GAAFET（DC NT GAAFET）结构，与相同占位面积的NT GAAFET和NW GAAFET相比，其Ion获得提升。与NT GAAFET和NW GAAFET相比，DC NT GAAFET中的Ion分别获得64.8%和1.7倍的增益。DC NT GAAFET的Ioff比NT GAAFET退化61.8%，SS在两种器件结构中几乎相当，而DC NT GAAFET的Ion/Ioff比由于Ion的大幅增大仍比NT GAAFET微妙提升2.4%，表明无论是否引入额外通道，DC NT GAAFET相对于NT GAAFET均保持优越的栅极静电可控性。另一方面，DC NT GAAFET和NT GAAFET均表现出优于NW GAAFET的器件性能，体现在由抑制的短沟道效应（SCEs）所表征的高运行速度和更好的静电可控性。
引用
@article{arxiv.2307.02226,
title = {Drive Current Boost in Double-Channeled Nanotube Gate all Around Field Effect Transistor},
author = {Laixiang Qin and Chunlai Li and Yiqun Wei and Zhangwei Xu and Jin He and Yandong He and Yutao Yue},
journal= {arXiv preprint arXiv:2307.02226},
year = {2023}
}
备注
8 page, 4figures