蓝宝石与 GaN 衬底上平面肖特基势垒二极管的不同反向泄漏电流输运机制
应用物理
2023-07-26 v1
摘要
通过分析与温度相关的电流-电压特性，实验展示并研究了不同衬底对氮化镓平面二极管截止态泄漏电流的影响。
引用
@article{arxiv.2307.13404,
title = {Different reverse leakage current transport mechanismsof planar Schottky barrier diodes(SBDs) on Sapphire and GaN Substrate},
author = {Xiao Wang and Zhi-Yu Lin and Yu-Min Zhang and Guo-Qiang Ren and Ke Xu},
journal= {arXiv preprint arXiv:2307.13404},
year = {2023}
}