采用双势垒阳极结构的0.36 V开启电压与10 kV击穿电压的横向AlGaN/GaN肖特基势垒二极管
材料科学
2022-06-17 v1 应用物理
摘要
在本快报中，我们展示了一种基于蓝宝石衬底的横向AlGaN/GaN肖特基势垒二极管(SBD)，具有低开启电压(Von)和高击穿电压(VBK)。通过使用由铂(Pt)与钽(Ta)混合物形成的双势垒阳极(DBA)结构，SBD的Von可低至0.36 V，泄漏电流为2.5E-6 A/mm。在蓝宝石上高质量碳掺杂GaN缓冲层的支撑下，当阳极到阴极间距为85 μm时，VBK可达到超过10 kV。结合VBK与25.1 mΩ·cm²的比导通电阻(Ron,sp)，SBD的功率优值可达4.0 GW/cm²，展示了在超高压电子器件中应用的巨大潜力。
引用
@article{arxiv.2206.07881,
title = {A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode Structure},
author = {Ru Xu and Peng Chen and Jing Zhou and Yimeng Li and Yuyin Li and Tinggang Zhu and Dunjun Chen and Zili Xie and Jiandong Ye and Xiangqian Xiu and Rong Zhang and Youdou Zheng},
journal= {arXiv preprint arXiv:2206.07881},
year = {2022}
}
备注
4 pages, 4 figures and 1 table. This work has ever been successfully submitted to the IEEE Electron Device Letters for possible publication in Jan. 2022, and the manuscript ID is EDL-2022-01-0014. Finally, it is suggested to be submitted to another journal such as IEEE TED