相关论文: Electrically addressing a single self-assembled qu…
We report reproducible fabrication of InP-InAsP nanowire light emitting diodes in which electron-hole recombination is restricted to a quantum-dot-sized InAsP section. The nanowire geometry naturally self-aligns the quantum dot with the…
We study the electronic structure of a single self-assembled InAs quantum dot by probing elastic single-electron tunneling through a single pair of weakly coupled dots. In the region below pinch-off voltage, the non-linear threshold voltage…
We report the observation of transverse electric polarized electroluminescence from InAs/AlInAs quantum dash quantum cascade structures up to room temperature. The emission is attributed to the electric field confined along the shortest…
We adopt an atomistic pseudopotential description of the electronic structure of self-assembled, lens shaped InAs quantum dots within the ``linear combination of bulk bands'' method. We present a detailed comparison with experiment,…
A single-electron transistor has been realized in a Ga[Al]As heterostructure by oxidizing lines in the GaAs cap layer with an atomic force microscope. The oxide lines define the boundaries of the quantum dot, the in-plane gate electrodes,…
A highly sensitive charge detector is realized for a quantum dot in an InAs nanowire. We have developed a self-aligned etching process to fabricate in a single step a quantum point contact in a two-dimensional electron gas and a quantum dot…
We present a simulation to characterize the dependence on hydrostatic pressure for the photoluminescence spectra in self-assembled quantum dots with lens shape geometry. We have tested the physical effects of the band offset and…
InAs/InP quantum dots are excellent sources of telecom single-photon emission and are among the most promising candidates for scalable quantum photonic circuits. However, geometric differences in each quantum dot leads to slightly different…
The hyperfine interaction of an electron with nuclei in the annealed self-assembled InAs/GaAs quantum dots is theoretically analyzed. For this purpose, the annealing process, and energy structure of the quantum dots are numerically modeled.…
We investigate the photoluminescence temperature dependence of individual InAs/InGaAlAs quantum dots emitting in the optical telecommunication bands. The high-density dots are grown on InP substrates and the selection of a smaller dot…
We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of resonant carrier injection into a single QD. Resonant…
Deterministically integrating semiconductor quantum emitters with plasmonic nano-devices paves the way towards chip-scale integrable, true nanoscale quantum photonics technologies. For this purpose, stable and bright semiconductor emitters…
We have determined both the real and imaginary parts of the dielectric polarizability of a single quantum dot. The experiment is based on the observation and the manipulation of Rayleigh scattering at photon frequencies near the resonance…
Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length…
Time-resolved microphotoluminescence study is presented for quantum dots which are formed in the InAs/GaAs wetting layer. These dots are due to fluctuations of In composition in the wetting layer. They show spectrally sharp luminescence…
The emission of circularly polarized light from a single quantum dot relies on the injection of carriers with well-defined spin polarization. Here we demonstrate single dot electroluminescence (EL) with a circular polarization degree up to…
We report optical orientation experiments in individual, strain free GaAs quantum dots in AlGaAs grown by droplet epitaxy. Circularly polarized optical excitation yields strong circular polarization of the resulting photoluminescence at 4K.…
We study a device for entangling electrons as cotunneling occurs through a quantum dot where on-site electron-electron interactions $U$ are in place. The main advantage of this device is that single particle processes are forbidden by…
We report the fabrication and photoluminescence properties of laterally-coupled GaAs/AlGaAs quantum dots. The coupling in the quantum dot molecules is tuned by an external electric field. An intricate behavior, consisting of spectral line…
We report the observation of a Purcell enhancement in the electroluminescence decay rate of a single quantum dot, embedded in a microcavity light-emitting-diode structure. Lateral confinement of the optical mode was achieved using an…