相关论文: A proposal for a new type of thin-film field-emiss…
Interest in the superconducting proximity effect has recently been reignited by theoretical predictions that it could be used to achieve topological superconductivity. Low-T$_{c}$ superconductors have predominantly been used in this effort,…
A new field electron emission (FE) mechanism, which includes Coulomb blockade and quantum confinement effects, is revealed for heterostructured emitters composed of quantum dots and nanowires self-assembled at diamond nanotips. The total…
Strong-field quantum electronics is emerging as a potential candidate in information processing but still coherence vs decoherence is a primary concern of the concept. Strong-field coherent processes in band gap materials have led during…
Battery electrode surfaces are generally coated with electronically insulating solid films of thickness 1-50 nm. Both electrons and Li+ can move at the electrode-surface film interface in response to the voltage, which adds complexity to…
Topological materials host fascinating low dimensional gapless states at the boundary. As a prominent example, helical topological edge states (TESs) of two-dimensional topological insulators (2DTIs) and their stacked three-dimensional (3D)…
We report on the electronic structure of $\alpha$-Sn films in the very low thickness regime grown on InSb(111)A. High-resolution low photon energies angle-resolved photoemission (ARPES) allows for the direct observation of the linearly…
The oxide-metal-oxide architecture is a promising approach for the development of the high-performance indium-free transparent electrode (TE), which is a key component of various optoelectronic applications such as solar cells, organic…
The field effect in metal-oxide-semiconductor (MOS) capacitors plays a key role in field-effect transistors (FETs), which are the fundamental building blocks of modern digital integrated circuits. Recent works show that the field effect can…
A simple model to describe Mixed Ionic Electronic Conductors (MIEC) in terms of standard semiconductor physics is described. This model allows to understand defect equilibrium and charge transport at ideal heterojunctions between materials…
We explore the potential of Time-Of-Flight Medium Energy Ion Scattering (TOFMEIS) for thin film analysis and analyze possible difficulties in evaluation of experimental spectra. Issues regarding different combinations of composition and…
We report comprehensive angle-resolved photoemission investigations on the electronic structure of single crystal multiple-layer FeSe films grown on CaF2 substrate by pulsed laser deposition (PLD) method. Measurements on FeSe/CaF2 samples…
A modified electron beam induced deposition method using a parallel beam of electrons is developed. The method relies on the build-up of surface potential on an insulating surface exposed to an electron beam. Presence of sharp edges on the…
Secondary electron emission (SEE) from solids plays an important role in many areas of science and technology.1 In recent years, there has been renewed interest in the experimental and theoretical studies of SEE. A recent study proposed…
Mid-infrared (MIR) emitters are critical components in advanced photonic systems, driving progress in fields such as chemical sensing, environmental monitoring, medical diagnostics, thermal imaging and free-space communications.…
The field-effect technique, popular thanks to its application in common field-effect transistors, is here applied to metallic thin films by using as a dielectric a novel polymer electrolyte solution. The maximum injected surface charge,…
A previously unknown effect-giant spatial redistribution of the electric field strength in a crystal under illumination of the structure - was discovered and investigated in real photoresistors on high-resistivity (semi-insulating)…
In this paper we report the development of a new method for the evaluation of thin films mass thickness and composition based on the Energy Dispersive X-Ray Spectroscopy (EDS). The method exploits the theoretical calculation of the in-depth…
Ge$_{1-x}$Fe$_{x}$ (Ge:Fe) shows ferromagnetic behavior up to a relatively high temperature of 210 K, and hence is a promising material for spintronic applications compatible with Si technology. We have studied its electronic structure by…
Within the framework of the phenomenological Ginzburg-Landau theory influence of semiconductor electrodes on the properties of thin ferroelectric films is considered. The contribution of the semiconductor electrodes with different Debye…
This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area…