相关论文: $\Psi=0$ at a sharp semiconductor/insulator interf…

The modeling of finite-extent semiconductor nanostructures that are embedded in a host material requires the numerical treatment of the boundary in a finite simulation domain. For the study of a self-assembled InAs dot embedded in GaAs,…

Topological edge states appear at the interface of topologically distinct two Hermitian insulators. We study the extension of this idea to non-Hermitian systems. We consider PT symmetric and topologically distinct non-Hermitian insulators…

A few exactly solvable interacting quantum many-body problems with impurities were previously reported to exhibit unusual features such as non-localization and absence of backscattering. In this work we consider the use of these integrable…

We investigate properties of a particle confined to a hard-wall spiral-shaped region. As a case study we analyze in detail the Archimedean spiral for which the spectrum above the continuum threshold is absolutely continuous away from the…

The asymptotic analysis of Bergman kernels with respect to exponentially varying measures near emergent interfaces has attracted recent attention. Such interfaces typically occur when the associated limiting Bergman density function…

Free standing InP quantum dots have previously been theoretically and experimentally shown to have a direct band gap across a large range of experimentally accessible sizes. We demonstrate that when these dots are embedded coherently within…

The bulk-boundary correspondence is an integral feature of topological analysis and the existence of boundary or interface modes offers direct insight into the topological structure of the Bloch wave function. While only the topology of the…

How do we uniquely identify a quantum phase, given its ground state wave-function? This is a key question for many body theory especially when we consider phases like topological insulators, that share the same symmetry but differ at the…

Interfaces between exfoliated topological insulator Bi2Se3 and several transition metals deposited by sputtering were studied by XPS, SIMS, UPS and contact I-V measurements. Chemically clean interfaces can be achieved when coating Bi2Se3…

We present a new formulation of the multipolar expansion of an exact boundary condition for the wave equation, which is truncated at the quadrupolar order. Using an auxiliary function, that is the solution of a wave equation on the sphere…

We consider fundamental issues of the mathematical theory of the wave propagation in waveguides with inclusions. Analysis is performed in terms of a boundary eigenvalue problem for the Maxwell equations which is reduced to an eigenvalue…

Energy dispersion and spin orientation of the protected states at interfaces between topological insulators (TIs) and non-topological materials depend on the charge redistribution, strain, and atomic displacement at the interface. Knowledge…

We consider theoretically a closed (zero-dimensional) semiconductor microcavity where confined vacuum photonic mode is coupled to electrons in valence band of the semiconductor. It is shown that vacuum-induced virtual electron transitions…

The results of modification of the CASCIE code aimed at implementing open boundary conditions are presented. The accelerator section developed at CERN was chosen as a prototype for the structured waveguide under testing. Results of testing…

Particle simulations confined by sharp walls usually develop an oscillatory density profile. For some applications, most notably soft matter liquids, this behavior is often unrealistic and one expects a monotonic density climb instead. To…

We specify the semiclassical no-boundary wave function of the universe without relying on a functional integral of any kind. The wave function is given as a sum of specific saddle points of the dynamical theory that satisfy conditions of…

The idealized theory of quantum vacuum energy density is a beautiful application of the spectral theory of differential operators with boundary conditions, but its conclusions are physically unacceptable. A more plausible model of a…

The problem of Fermi-level pinning at semiconductor-metal contacts is readdressed starting from first-principles calculations for Al/GaAs. We give quantitative evidence that the Schottky barrier height is very little affected by any…

We study the surface resistivity of a three-dimensional topological insulator when the boundaries exhibit a non trivial curvature. We obtain an analytical solution for a spherical topological insulator, and we show that a non trivial…

The band offsets between crystalline and hydrogenated amorphous silicon (a-Si:H) are key parameters governing the charge transport in modern silicon hetrojunction solar cells. They are an important input for macroscopic simulators that are…