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相关论文: Evolution of spectral function in a doped Mott ins…

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We elucidate the effects of defect disorder and $e$-$e$ interaction on the spectral density of the defect states emerging in the Mott-Hubbard gap of doped transition-metal oxides, such as Y$_{1-x}$Ca$_{x}$VO$_{3}$. A soft gap of kinetic…

强关联电子 · 物理学 2015-11-12 Adolfo Avella , Andrzej M. Oleś , Peter Horsch

We investigated the recently found superconductor LaO_{1-x}F_xFeAs by X-ray absorption spectroscopy (XAS). From a comparison of the O K-edge with LDA calculations we find good agreement and are able to explain the structure and changes of…

We investigate the spectral properties of doped one-dimensional excitonic insulators. Employing matrix-product-state-based methods, we compute the single-particle spectrum and optical conductivity in a correlated two-band model. Our…

强关联电子 · 物理学 2026-04-17 Tatsuya Kaneko , Ryota Ueda , Satoshi Ejima

I introduce a doped two-dimensional quantum dimer model describing a doped Mott insulator and retaining the original Fermi statistics of the electrons. This model shows a rich phase diagram including a d-wave hole-pair unconventional…

强关联电子 · 物理学 2008-04-24 Didier Poilblanc

Substitution of La by Sr in the 25% Ni doped charge transfer insulator LaFeO3 creates structural changes that inflect the electrical conductivity caused by small polaron hopping via exchange interactions and charge transfer. The…

The changes in the electronic structure of V2O3 across the metal-insulator transition induced by temperature, doping and pressure are identified using high resolution x-ray absorption spectroscopy at the V pre K-edge. Contrary to what has…

Thin films provide a versatile platform to tune electron correlations and explore new physics in strongly correlated materials. Epitaxially grown thin films of the alkali-doped fulleride K$_{3+x}$C$_{60}$, for example, exhibit %various…

强关联电子 · 物理学 2022-08-15 Changming Yue , Yusuke Nomura , Philipp Werner

Using spin- and angle-resolved spectroscopy and relativistic many-body calculations, we investigate the evolution of the electronic structure of (Bi$_{1-x}$In$_x$)$_2$Se$_3$ bulk single crystals around the critical point of the trivial to…

An intuitive interpretation of the relationship between the dispersion relation of the single-particle excitation in a metal and that of the spin excitation in a Mott insulator is presented, based on the results for the one- and…

强关联电子 · 物理学 2014-07-14 Masanori Kohno

We investigate the effect of Na intercalation in the layered Mott insulator TiOCl within the framework of density functional theory. We show that the system remains always insulating for all studied Na concentrations, and the evolution of…

强关联电子 · 物理学 2010-04-09 Yu-Zhong Zhang , Kateryna Foyevtsova , Harald O. Jeschke , Martin U. Schmidt , Roser Valenti

We examined the temperature (T) evolution of the optical conductivity spectra of Sr$_3$Ir$_2$O$_7$ over a wide range of 10-400 K. The system was barely insulating, exhibiting a small indirect bandgap of $\sim$0.1 eV. The low-energy features…

强关联电子 · 物理学 2015-06-18 H. J. Park , C. H. Sohn , D. W. Jeong , G. Cao , K. W. Kim , S. J. Moon , Hosub Jin , Deok-Yong Cho , T. W. Noh

We show that a three dimensional topological insulator doped with magnetic impurities in the bulk can have a regime where the surface is magnetically ordered but the bulk is not. This is in contrast to conventional materials where bulk…

介观与纳米尺度物理 · 物理学 2012-05-11 G. Rosenberg , M. Franz

The knowledge of the charge carrier distribution among the different orbitals of Cu and O is a precondition for the understanding of the physical properties of various Cu-O frameworks. We employ electron energy-loss spectroscopy to…

超导电性 · 物理学 2020-05-27 Friedrich Roth , Alexandre Revcolevschi , Bernd Büchner , Martin Knupfer , Jörg Fink

Modulation of the charge carrier density in a Mott material by remote doping from a highly doped conventional band insulator is proposed to test theoretical predictions of band filling control of the Mott metal-insulator transition without…

材料科学 · 物理学 2011-11-11 Junwoo Son , Bharat Jalan , Adam P. Kajdos , Leon Balents , S. James Allen , Susanne Stemmer

We found direct experimental evidence for an orbital switching in the V 3d states across the metal-insulator transition in VO$_{2}$. We have used soft-x-ray absorption spectroscopy at the V $L_{2,3}$ edges as a sensitive local probe, and…

The one-dimensional extended Peierls-Hubbard model is studied at several band fillings using the density matrix renormalization group method. Results show that the ground state evolves from a Mott-Peierls insulator with a correlation gap at…

强关联电子 · 物理学 2009-10-30 Eric Jeckelmann

The surface states of a topological insulator in a fine-tuned magnetic field are ideal candidates for realizing a topological metal which is protected against disorder. Its signatures are (1) a conductance plateau in long wires in a finely…

介观与纳米尺度物理 · 物理学 2015-06-17 Quansheng Wu , Vincent E. Sacksteder

We analyze enhancements in the magnitude of the self-energy for electrons far away from the Fermi surface in doped Mott insulators using the dynamical cluster approximation to the Hubbard model. For large onsite repulsion, U, and hole…

强关联电子 · 物理学 2016-01-11 J. Merino , O. Gunnarsson , G. Kotliar

We have studied the effect of Al doping on the structural, magnetic and electrical properties of La$_{1-x}$Ba$_x$Mn$_{1-x}$Al$_x$O$_3$ ($0\leq x \leq 0.25$) manganite, annealed in two 750$^oC$ and 1350$^oC$ temperatures. The XRD analysis…

材料科学 · 物理学 2021-05-24 J. Ardashti Saleh , I. Abdolhosseini Sarsari , P. Kameli , H. Salamati

We investigate the effect of temperature on the electronic and crystal structures of Ca1-xSrxRuO3 via the evolution of O 1s core level spectra as a function of temperature and composition, x. O 1s spectra in SrRuO3 exhibit a dominant sharp…

强关联电子 · 物理学 2009-11-11 Ravi Shankar Singh , Kalobaran Maiti