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相关论文: Evolution of spectral function in a doped Mott ins…

200 篇论文

We study the electronic spectral properties in two examples of strongly interacting systems: a Mott-Hubbard insulator with additional electron-boson interactions, and a polaronic semiconductor. An approximate unified framework is developed…

强关联电子 · 物理学 2009-11-11 S. Fratini , S. Ciuchi

High-temperature superconductivity emerges in the CuO$_2$ plane upon doping a Mott insulator. To ascertain the influence of Mott physics plus short-range correlations, we solve a three-band copper-oxide model in the charge-transfer regime…

强关联电子 · 物理学 2016-07-05 L. Fratino , P. Sémon , G. Sordi , A. -M. S. Tremblay

We theoretically investigate the doping evolution of the electronic state of high-Tc cuprate on both sides of the half-filling on the basis of the three-dimensional three-band Hubbard model with a layered structure using the Hartree-Fock…

强关联电子 · 物理学 2015-04-08 Shigeru Koikegami , Masaru Kato , Takashi Yanagisawa

The spatial variation of electronic states was imaged in the lightly doped Mott insulator Ca_{2-x}Na_{x}CuO_{2}Cl_{2} using scanning tunneling microscopy / spectroscopy (STM/STS). We observed nano-scale domains with a high local density of…

超导电性 · 物理学 2009-09-29 Y. Kohsaka , K. Iwaya , S. Satow , T. Hanaguri , M. Azuma , M. Takano , H. Takagi

Topological insulators are bulk semiconductors that manifest in-gap massless Dirac surface states due to the topological bulk-boundary correspondence principle [1-3]. These surface states have been a subject of tremendous ongoing interest,…

We establish the spectral line shape of orbital excitations created by resonant inelastic X-ray scattering for the model Mott insulator CoO. Improved experimental energy resolution reveals that the line shapes are strikingly different from…

The combination of bandstructure theory in the local density approximation with dynamical mean field theory was recently successfully applied to V$_2$O$_3$ -- a material which undergoes the f amous Mott-Hubbard metal-insulator transition…

强关联电子 · 物理学 2009-11-10 K. Held , J. W. Allen , V. I. Anisimov , V. Eyert , G. Keller , H. -D. Kim , S. -K. Mo , D. Vollhardt

Trial wavefunctions, constructed explicitly from the unique 2-dimensional Mott insulating state with antiferromagnetic order, are proposed to describe the low-energy states of a Mott insulator slightly doped with holes or electrons. With…

强关联电子 · 物理学 2009-11-07 T. K. Lee , Chang-Ming Ho , Naoto Nagaosa , Wei-Cheng Lee

We characterize the positively charged exciton (X1+) in single InGaAs quantum dots using resonant laser spectroscopy. Three samples with different dopant species (Be or C as acceptors, Si as a donor) are compared. The p-doped samples…

介观与纳米尺度物理 · 物理学 2015-05-30 B. D. Gerardot , R. J. Barbour , D. Brunner , P. A. Dalgarno , A. Badolato , N. Stoltz , P. M. Petroff , J. Houel , R. J. Warburton

We study one-dimensional trapped Bose gases in the strongly interacting regime. The systems are created in an optical lattice and are subject to a longitudinal periodic potential. Bragg spectroscopy enables us to investigate the excitation…

软凝聚态物质 · 物理学 2009-11-10 Thilo Stöferle , Henning Moritz , Christian Schori , Michael Köhl , Tilman Esslinger

A central issue of Mott physics, with symmetries being fully retained in the spin background, concerns the charge excitation. In a two-leg spin ladder with spin gap, an injected hole can exhibit either a Bloch wave or a density wave by…

强关联电子 · 物理学 2018-07-25 Zheng Zhu , D. N. Sheng , Zheng-Yu Weng

Quantum transitions between the Mott insulator and metals by controlling filling in two-dimensional square lattice are characterized by a large dynamical exponent $z=4$ where the origin of unusual metallic properties near the Mott insulator…

强关联电子 · 物理学 2007-05-23 Masatoshi Imada , Fakher F. Assaad , Hirokazu Tsunetsugu , Yukitoshi Motome

Superconductivity emerges from the cuprate antiferromagnetic Mott state with hole doping. The resulting electronic structure is not understood, although changes in the state of oxygen atoms appear paramount. Hole doping first destroys the…

超导电性 · 物理学 2012-05-24 Y. Kohsaka , T. Hanaguri , M. Azuma , M. Takano , J. C. Davis , H. Takagi

Bose-Fermi mixtures naturally appear in various physical systems. In semiconductor heterostructures, such mixtures can be realized, with bosons as excitons and fermions as dopant charges. However, the complexity of these hybrid systems…

We use a nonequilibrium implementation of extended dynamical mean field theory to study the effect of dynamical screening in photo-excited Mott insulators. The insertion of doublons and holes adds low-energy screening modes and leads to a…

强关联电子 · 物理学 2015-11-17 Denis Golez , Martin Eckstein , Philipp Werner

We report the pressure study of a doped organic superconductor with Hall coefficient and conductivity measurements. We find that maximally enhanced superconductivity and a non-Fermi liquid appear around a certain pressure where mobile…

材料科学 · 物理学 2025-01-07 H. Oike , K. Miyagawa , H. Taniguchi , K. Kanoda

Microwave spectroscopy was used to probe the superfluid-Mott Insulator transition of a Bose-Einstein condensate in a 3D optical lattice. Using density dependent transition frequency shifts we were able to spectroscopically distinguish sites…

We report on the Pt doping effect on surface and electronic structure in Ir$_{\mathrm{1-x}}$Pt$_{\mathrm{x}}$Te$_ {\mathrm{2}}$ by scanning tunneling microscopy (STM) and spectroscopy (STS). The surface prepared by cleavage at 4.2 K shows a…

超导电性 · 物理学 2015-06-24 Y. Fujisawa , T. Machida , K. Igarashi , A. Kaneko , T. Mochiku , S. Ooi , M. Tachiki , K. Komori , K. Hirata , H. Sakata

An influence of the localization of itinerant electrons induced by correlated hopping on the electronic charge and heat transport is discussed for the lightly doped Mott insulator phase of the Falicov-Kimball model. The case of strongly…

强关联电子 · 物理学 2020-03-05 D. A. Dobushovskyi , A. M. Shvaika

WTe$_2$ is a multifunctional quantum material exhibiting numerous emergent phases in which tuning of the carrier density plays an important role. Here we demonstrate two non-monotonic changes in the electronic structure of WTe$_2$ upon…