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相关论文: Evolution of spectral function in a doped Mott ins…

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Creating heterostructures with graphene/graphite is a practical method for charge-doping $\alpha$-RuCl$_3$, but not sufficient to cause the insulator-to-metal transition. In this study, detailed scanning tunneling microscopy/spectroscopy…

We used x-ray photoemission spectroscopy to investigate the electronic structure of the Mott insulator LaVO3 embedded in LaAlO3. By limiting the upper layer of LaAlO3 to 3 unit cells, the underlying LaVO3 could be probed. The V 2p…

材料科学 · 物理学 2015-06-25 Y. Hotta , H. Wadati , A. Fujimori , T. Susaki , H. Y. Hwang

A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction…

强关联电子 · 物理学 2013-05-29 Philipp Werner , Andrew J. Millis

We develop an exact generalized Bogoliubov transformation for the spin 3/2 Hubbard model with large anti-Hunds rule coupling near half filling. Since our transformation is unitary, we can thereafter employ standard approximate mean field…

强关联电子 · 物理学 2009-11-10 Stellan Ostlund , A. Karlhede , T. H. Hansson

Experiments on layered materials call for a study of the influence of short-range spin correlations on the Mott transition. To this end, we solve the cluster dynamical mean-field equations for the Hubbard model on a plaquette with…

强关联电子 · 物理学 2010-06-23 G. Sordi , K. Haule , A. -M. S. Tremblay

Detailed doping dependence of the electronic specific heat coefficient gamma is studied for La2-xSrxCuO4 (LSCO) single crystals in the slightly-doped regime. We find that gamma systematically increases with doping, and furthermore, even for…

超导电性 · 物理学 2010-04-21 Seiki Komiya , I. Tsukada

We address the spectral properties of Mott insulators with orbital degrees of freedom, and investigate cases where the orbital symmetry leads to Ising-like superexchange in the orbital sector. The paradigm of a hole propagating by its…

强关联电子 · 物理学 2008-12-16 Krzysztof Wohlfeld , Maria Daghofer , Andrzej M. Oles , Peter Horsch

The spin-orbit Mott insulator Sr${}_2$IrO${}_4$ has attracted a lot of interest in recent years from theory and experiment due to its close connection to isostructural high-temperature copper oxide superconductors. Despite of not being…

强关联电子 · 物理学 2019-05-22 Benjamin Lenz , Cyril Martins , Silke Biermann

By using a combination of detailed experimental studies and simple theoretical arguments, we identify a novel mechanism characterizing the hopping transport in the Mott insulating phase of Ca$_{2-x}$Sr$_x$RuO$_4$ near the metal-insulator…

强关联电子 · 物理学 2009-11-10 S. Nakatsuji , V. Dobrosavljevic , D. Tanaskovic , M. Minakata , H. Fukazawa , Y. Maeno

We investigate the shift current bulk photovoltaic response of materials close to a band inversion topological phase transition. We find that the bulk photocurrent reverses direction across the band inversion transition, and that its…

介观与纳米尺度物理 · 物理学 2016-09-08 Liang Z. Tan , Andrew M. Rappe

We investigate properties of a topological Mott insulator in one dimension by examining the bulk topological invariant and the entanglement spectrum of a correlated electron model. We clarify how gapless edge states in a non-interacting…

强关联电子 · 物理学 2014-06-10 Tsuneya Yoshida , Robert Peters , Satoshi Fujimoto , Norio Kawakami

In this paper we study the dominant microscopic processes that generate nearly the whole one-electron removal and addition spectral weight of the one-dimensional Hubbard model for all values of the on-site repulsion $U$. We find that for…

强关联电子 · 物理学 2009-11-11 J. M. P. Carmelo , K. Penc

We investigate the metal insulator transitions at finite temperature for the Hubbard model with diagonal alloy disorder. We solve the dynamical mean field theory equations with the non crossing approximation and we use the coherent…

强关联电子 · 物理学 2009-11-11 P. Lombardo , R. Hayn , G. I. Japaridze

Though most fermionic Mott insulators order at low temperatures, ordering is ancillary to their insulating behaviour. Our emphasis here is on disentangling ordering from the intrinsic strongly correlated physics of a doped half-filled band.…

强关联电子 · 物理学 2009-11-10 Tudor D. Stanescu , Philip Phillips

We have performed a systematic doping dependent study of La$_{2-x}$Sr$_x$CuO$_4$ (LSCO) (0.03$\leq x \leq$0.3) by angle-resolved photoemission spectroscopy. In the entire doping range, the underlying ``Fermi surface" determined from the low…

The notion of the electron Fermi surface is one of the characteristic concepts in the field of condensed matter physics, and it plays a crucial role in the understanding of the physical properties of doped Mott insulators. Based on the t-J…

强关联电子 · 物理学 2016-07-05 Xixiao Ma , Yu Lan , Ling Qin , Lulin Kuang , Shiping Feng

We study the effects of dilute La and Rh doping on the electronic structure of the relativistic Mott insulator Sr$_2$IrO$_4$ using fully relativistic and magnetically non-collinear density functional theory with the inclusion of an on-site…

In a system with strong local repulsive interactions it should be more difficult to add an electron than to extract one. We make this idea precise by deriving various exact sum rules for the one-particle spectral function independent of the…

强关联电子 · 物理学 2009-11-10 Mohit Randeria , Rajdeep Sensarma , Nandini Trivedi , Fu-Chun Zhang

We have investigated the electronic structure of the transition metal oxide Ca3Ru2O7 within density functional theory using the generalized gradient approximation while considering strong Coulomb correlations in the framework of the fully…

强关联电子 · 物理学 2024-04-22 V. N. Antonov , D. A. Kukusta , L. V. Bekenov

Topological insulators are insulating in the bulk but feature conducting states on their surfaces. Standard methods for probing their topological properties largely involve probing the surface, even though topological invariants are defined…