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相关论文: Evolution of spectral function in a doped Mott ins…

200 篇论文

Despite many efforts to rationalize the strongly correlated electronic ground states in doped Mott insulators, the nature of the doping induced insulator to metal transition is still a subject under intensive investigation. Here we probe…

High temperature superconductivity in cuprates is realized by doping the Mott insulator with charge carriers. A central issue is how such an insulating state can evolve into a conducting or superconducting state when charge carriers are…

The phase diagram of the high-Tc cuprates is dominated by the Mott insulating phase of the parent compounds. As we approach it from large doping, a standard Fermi-liquid gradually turns into a bad non-Fermi liquid metal, a process which…

强关联电子 · 物理学 2014-04-29 Luca de' Medici , Gianluca Giovannetti , Massimo Capone

The internal structure of doped holes in the Mott insulator may provide important insight into the physics of doped cuprates. Its observability via a single-particle probe by scanning tunneling spectroscopy (STS) and angle-resolved…

强关联电子 · 物理学 2024-08-27 Jing-Yu Zhao , Zheng-Yu Weng

In this note we study the electron spectral weight of doped Mott insulators based on the 2D slave boson gauge field theory. The vertex correction with static gauge field is calculated in the second order perturbation theory. The vertex…

凝聚态物理 · 物理学 2015-06-25 H. C. Lee

The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide…

One of the major puzzles in condensed matter physics has been the observation of a Mott-insulating state away from half-filling. The filling-controlled Mott insulator-metal transition, induced via charge-carrier doping, has been extensively…

强关联电子 · 物理学 2021-07-13 S. Hameed , J. Joe , D. M. Gautreau , J. W. Freeland , T. Birol , M. Greven

Angle resolved photoemission spectroscopy is used to observe changes in the electronic structure of bulk-doped topological insulator Cu$_x$Bi$_2$Se$_3$ as additional copper atoms are deposited onto the cleaved crystal surface. Carrier…

超导电性 · 物理学 2015-06-16 L. A. Wray , S. Xu , M. Neupane , A. V. Fedorov , Y. S. Hor , R. J. Cava , M. Z. Hasan

The superfluid to Mott insulator transition in cavity polariton arrays is analyzed using the variational cluster approach, taking into account quantum fluctuations exactly on finite length scales. Phase diagrams in one and two dimensions…

其他凝聚态物理 · 物理学 2009-09-17 Markus Aichhorn , Martin Hohenadler , Charles Tahan , Peter B. Littlewood

On the basis of Quantum-Monte-Carlo results the evolution of the spectral weight $A(\vec k, \omega)$ of the two-dimensional Hubbard model is studied from insulating to metallic behavior. As observed in recent photoemission experiments for…

凝聚态物理 · 物理学 2009-10-22 R. Preuss , W. von der Linden , W. Hanke

In strongly correlated electron systems, the emergence of states in the Mott gap in the single-particle spectrum following the doping of the Mott insulator is a remarkable feature that cannot be explained in a conventional rigid-band…

强关联电子 · 物理学 2015-08-20 Masanori Kohno

We present theoretical analysis of Hall effect in doped Mott-Hubbard insulator, considered as a prototype of cuprate superconductor. We consider the standard Hubbard model within DMFT approximation. As a typical case we consider the…

强关联电子 · 物理学 2023-03-14 E. Z. Kuchinskii , N. A. Kuleeva , M. V. Sadovskii , D. I. Khomskii

Using a combination of {\it ab initio} bandstructure methods and dynamical mean-field theory we study the single-particle spectrum of the prototypical charge-transfer insulator NiO. Good agreement with photoemission and…

强关联电子 · 物理学 2015-06-25 J. Kunes , V. I. Anisimov , A. V. Lukoyanov , D. Vollhardt

We construct a holographic model in the framework of Q-lattices whose dual exhibits metal-insulator transitions. By introducing an interacting term between the Q-lattice and the electromagnetic field in bulk geometry, we find such kind of…

高能物理 - 理论 · 物理学 2015-10-26 Yi Ling , Peng Liu , Chao Niu , Jian-Pin Wu

A systematic LSDA+U study of doping effects on the electronic and structural properties of single layer CoO2 is presented. Undoped CoO2 is a charge transfer insulator within LSDA+U and a metal with a high density of states (DOS) at the…

超导电性 · 物理学 2007-05-23 Peihong Zhang , Weidong Luo , Vincent H. Crespi , Marvin L. Cohen , Steven G. Louie

We study the electronic structure of the doped paramagnetic insulator by finite temperature Quantum Monte-Carlo simulations for the 2D Hubbard model. Throughout we use the moderately high temperature T=0.33t, where the spin correlation…

强关联电子 · 物理学 2007-05-23 C. Groeber , M. G. Zacher , R. Eder

The dynamical mean-field theory together with the non-crossing approximation is used to set up a novel scheme to study the electronic structure of strongly correlated electron systems. The non-interacting band structure is obtained from a…

强关联电子 · 物理学 2007-05-23 M. B. Zoelfl , Th. Pruschke , J. Keller , A. I. Poteryaev , I. A. Nekrasov , V. I. Anisimov

We study the hole and magnon spectral functions as a function of hole doping in the two-dimensional (2D) t-J and t-t'-t"-J models working within the limits of the spin-wave theory, by linearizing the hole-spin-deviation interaction and by…

强关联电子 · 物理学 2015-05-28 Satyaki Kar , Efstratios Manousakis

Employing the four-band tight-binding model we study theoretically the doping dependence of the spin response in the normal state of novel Fe-based pnictide superconductors. We show that the commensurate spin density wave (SDW) transition…

超导电性 · 物理学 2008-09-11 M. M. Korshunov , I. Eremin

We show that doped Mott insulators exhibit a collective degree of freedom, not made out of the elemental excitations, because the number of single-particle addition states at low energy per electron per spin is greater than one. The…

强关联电子 · 物理学 2008-05-30 Philip Phillips , Ting-Pong Choy , Robert G. Leigh